DC Field | Value | Language |
---|---|---|
dc.contributor.author | An, SJ | - |
dc.contributor.author | Park, WI | - |
dc.contributor.author | Yi, GC | - |
dc.contributor.author | Cho, S | - |
dc.date.accessioned | 2016-03-31T13:07:59Z | - |
dc.date.available | 2016-03-31T13:07:59Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2002-04 | - |
dc.identifier.issn | 0947-8396 | - |
dc.identifier.other | 2002-OAK-0000002552 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/19142 | - |
dc.description.abstract | High-quality ZnO thin films were grown on single-crystalline Al2O3(0001) and amorphous SiO2/Si(100) substrates at 400-640degreesC using laser molecular beam epitaxy. For film growth, the third harmonics of a pulsed Nd:YAG laser were illuminated on a ZnO target. The ZnO films were epitaxially grown on Al2O3(0001) with the narrow X-ray diffraction full width at half maximum (FWHM) of 0.04degrees and the films on SiO2/Si(100) exhibited a preferred c-axis orientation. Furthermore, the films exhibited excellent optical properties in photoluminescence (PL) measurements with very sharp excitonic and weak deep-level emission peaks. At 15 K, PL FWHM values of the films grown on Al2O3 (0001) and SiO2/Si(100) were 3 and 18 meV, respectively. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | SPRINGER-VERLAG | - |
dc.relation.isPartOf | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | - |
dc.subject | MOLECULAR-BEAM EPITAXY | - |
dc.subject | DEPOSITION | - |
dc.subject | SAPPHIRE | - |
dc.subject | HETEROEPITAXY | - |
dc.subject | TEMPERATURE | - |
dc.subject | SPECTRA | - |
dc.title | Laser-MBE growth of high-quality ZnO thin films on Al2O3(0001) and SiO2/Si(100) using the third harmonics of a Nd : YAG laser | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1007/S00339010103 | - |
dc.author.google | An, SJ | - |
dc.author.google | Park, WI | - |
dc.author.google | Yi, GC | - |
dc.author.google | Cho, S | - |
dc.relation.volume | 74 | - |
dc.relation.issue | 4 | - |
dc.relation.startpage | 509 | - |
dc.relation.lastpage | 512 | - |
dc.relation.journal | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.74, no.4, pp.509 - 512 | - |
dc.identifier.wosid | 000174673300010 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 512 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 509 | - |
dc.citation.title | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | - |
dc.citation.volume | 74 | - |
dc.contributor.affiliatedAuthor | Yi, GC | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 37 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | EPITAXIAL-GROWTH | - |
dc.subject.keywordPlus | SAPPHIRE | - |
dc.subject.keywordPlus | SPECTRA | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | HETEROEPITAXY | - |
dc.subject.keywordPlus | GAN | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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