DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, JK | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2016-03-31T13:08:23Z | - |
dc.date.available | 2016-03-31T13:08:23Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2002-04 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.other | 2002-OAK-0000002535 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/19157 | - |
dc.description.abstract | The effect of a Au overlayer on the thermal stability of Pt transparent ohmic contacts on p-type GaN was investigated. The contact resistivity for the Pt contact (100 Angstrom) rapidly increased from 3.7 x 10(-4) to 8.8 Omega cm(2) after annealing for 16 h at 550degreesC. However, no degradation in the contact resistivity was found by incorporating the Au overlayer (50 Angstrom) on the Pt contact (50 Angstrom). The degradation of the Pt contact originated from the out-diffusion of N atoms producing N vacancies below the contact, resulting in a decrease in the net concentration of holes. For the Pt/Au contact, the Au layer acts as a sink for Ga atoms, causing the production of Ga vacancies below the contact. This suppresses the decrease of net concentration of holes, leading to a thermally stable ohmic contact. (C) 2002 The Electrochemical Society. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.relation.isPartOf | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.title | Effect of a Au overlayer on thermal stability of Pt transparent ohmic contact on p-type GaN | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1149/1.1456924 | - |
dc.author.google | Kim, JK | - |
dc.author.google | Lee, JL | - |
dc.relation.volume | 149 | - |
dc.relation.issue | 4 | - |
dc.contributor.id | 10105416 | - |
dc.relation.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.149, no.4, pp.G266 - G270 | - |
dc.identifier.wosid | 000174499700053 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | G270 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | G266 | - |
dc.citation.title | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.volume | 149 | - |
dc.contributor.affiliatedAuthor | Kim, JK | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-0036530385 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 9 | - |
dc.description.scptc | 8 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
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