DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chon, U | - |
dc.contributor.author | Jang, HM | - |
dc.contributor.author | Lee, SH | - |
dc.contributor.author | Yi, GC | - |
dc.date.accessioned | 2016-03-31T13:12:40Z | - |
dc.date.available | 2016-03-31T13:12:40Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2001-11 | - |
dc.identifier.issn | 0884-2914 | - |
dc.identifier.other | 2001-OAK-0000002313 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/19316 | - |
dc.description.abstract | Highly c-axis-oriented Bi3.25La0.75Ti3O12 (BLT) films with a homogeneous in-plane orientation were successfully grown on SiO2/Si(100) and Pt/Ti/SiO2/Si(100) substrates by a sol-coating route. The substitution of lanthanum ions for bismuth ions in the layered perovskite suppressed the formation of pyrochlore phase and enhanced the c-axis-oriented growth. The c-axis-oriented BLT film fabricated on a Pt/Ti/SiO2/Si(100) substrate showed fatigue-free characteristics with a large remanent polarization of 26-28 muC/cm(2) and the coercive field of 50-75 KV/cm. These features significantly enhance the potential value of the BLT film for the applications to high-density ferroelectric random-access memories devices. In addition, the c-axis-oriented BLT film, with a homogeneous in-plane orientation on an amorphous surface, can be used as a suitable template material for applications to various electro-magneto-optic devices. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | MATERIALS RESEARCH SOCIETY | - |
dc.relation.isPartOf | JOURNAL OF MATERIALS RESEARCH | - |
dc.subject | BISMUTH TITANATE FILMS | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | PULSED-LASER DEPOSITION | - |
dc.subject | FERROELECTRIC CAPACITORS | - |
dc.subject | BI4TI3O12 | - |
dc.subject | SILICON | - |
dc.subject | GROWTH | - |
dc.subject | ABLATION | - |
dc.subject | MEMORIES | - |
dc.title | Formation and characteristics of highly c-axis-oriented Bi3.25La0.75Ti3O12 thin films on SiO2/Si(100) and Pt/Ti/SiO2/Si(100) substrates | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1557/JMR.2001.0431 | - |
dc.author.google | Chon, U | - |
dc.author.google | Jang, HM | - |
dc.author.google | Lee, SH | - |
dc.author.google | Yi, GC | - |
dc.relation.volume | 16 | - |
dc.relation.issue | 11 | - |
dc.relation.startpage | 3124 | - |
dc.relation.lastpage | 3132 | - |
dc.relation.journal | JOURNAL OF MATERIALS RESEARCH | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS RESEARCH, v.16, no.11, pp.3124 - 3132 | - |
dc.identifier.wosid | 000172020600018 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 3132 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 3124 | - |
dc.citation.title | JOURNAL OF MATERIALS RESEARCH | - |
dc.citation.volume | 16 | - |
dc.contributor.affiliatedAuthor | Jang, HM | - |
dc.contributor.affiliatedAuthor | Yi, GC | - |
dc.identifier.scopusid | 2-s2.0-0035521910 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 33 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | BISMUTH TITANATE FILMS | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | PULSED-LASER DEPOSITION | - |
dc.subject.keywordPlus | FERROELECTRIC CAPACITORS | - |
dc.subject.keywordPlus | BI4TI3O12 | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | ABLATION | - |
dc.subject.keywordPlus | MEMORIES | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
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