DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chon, U | - |
dc.contributor.author | Kim, KB | - |
dc.contributor.author | Jang, HM | - |
dc.contributor.author | Yi, GC | - |
dc.date.accessioned | 2016-03-31T13:12:56Z | - |
dc.date.available | 2016-03-31T13:12:56Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2001-11-05 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2001-OAK-0000002301 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/19326 | - |
dc.description.abstract | Fatigue-free and highly c-axis oriented Bi3.15Sm0.85Ti3O12 (BSmT) thin films were grown on Pt/TiO2/SiO2/Si(100) substrates using the method of metalorganic sol decomposition. The BSmT film capacitor with a top Pt electrode showed significantly improved values of the remanent polarization (2P(r)) and the nonvolatile charge as compared to those of the Bi4-xLaxTi3O12 (x=0.75) film capacitor, recently known as the most promising candidate for nonvolatile memories. The 2P(r) value of the BSmT capacitor was 49 muC/cm(2) at an applied voltage of 10 V while the net nonvolatile switching charge was as high as 20 muC/cm(2) and remained essentially constant up to 4.5x10(10) read/write switching cycles at a frequency of 1 MHz. In addition to these, the capacitor demonstrated excellent charge-retention characteristics with its sensing margin of 17 muC/cm(2) and a strong resistance against the imprinting failure. (C) 2001 American Institute of Physics. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.title | Fatigue-free samarium-modified bismuth titanate (Bi4-xSmxTi3O12) film capacitors having large spontaneous polarizations | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1063/1.1415353 | - |
dc.author.google | Chon, U | - |
dc.author.google | Kim, KB | - |
dc.author.google | Jang, HM | - |
dc.author.google | Yi, GC | - |
dc.relation.volume | 79 | - |
dc.relation.issue | 19 | - |
dc.relation.startpage | 3137 | - |
dc.relation.lastpage | 3139 | - |
dc.contributor.id | 10084272 | - |
dc.relation.journal | APPLIED PHYSICS LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.79, no.19, pp.3137 - 3139 | - |
dc.identifier.wosid | 000171896600041 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 3139 | - |
dc.citation.number | 19 | - |
dc.citation.startPage | 3137 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 79 | - |
dc.contributor.affiliatedAuthor | Jang, HM | - |
dc.contributor.affiliatedAuthor | Yi, GC | - |
dc.identifier.scopusid | 2-s2.0-0000183165 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 238 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | FERROELECTRIC CAPACITORS | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | RETENTION | - |
dc.subject.keywordPlus | MEMORIES | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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