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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, WI | - |
| dc.contributor.author | Yi, GC | - |
| dc.date.accessioned | 2016-03-31T13:13:30Z | - |
| dc.date.available | 2016-03-31T13:13:30Z | - |
| dc.date.created | 2009-02-28 | - |
| dc.date.issued | 2001-10 | - |
| dc.identifier.issn | 0361-5235 | - |
| dc.identifier.other | 2001-OAK-0000002270 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/19347 | - |
| dc.description.abstract | We report on the photoluminescent (PL) properties of ZnO thin films grown on SiO2/Si(100) substrates using low pressure metal-organic chemical vapor deposition. The growth temperature of the films was as low as 400 degreesC. From the PL spectra of the films at 10-300 K, strong PL peaks due to fi-ee and bound excitons were observed. The origin of the near bandedge emission peaks was investigated measuring temperature-dependent PL spectra. In addition, the ZnO films demonstrated a stimulated emission peak at room temperature. Upon illumination with an excitation density of 1 MW/cm(2), a strong, sharp peak was observed at 3.181 eV. | - |
| dc.description.statementofresponsibility | X | - |
| dc.language | English | - |
| dc.publisher | MINERALS METALS MATERIALS SOC | - |
| dc.relation.isPartOf | JOURNAL OF ELECTRONIC MATERIALS | - |
| dc.subject | ZnO | - |
| dc.subject | metal organic chemical vapor deposition (MOCVD) | - |
| dc.subject | photoluminescence | - |
| dc.subject | SiO2/Si substrate | - |
| dc.subject | stimulated emission | - |
| dc.title | Photoluminescent properties of ZnO thin films grown on SiO2/Si(100) by metal-organic chemical vapor deposition | - |
| dc.type | Article | - |
| dc.contributor.college | 신소재공학과 | - |
| dc.identifier.doi | 10.1007/s11664-001-0127-7 | - |
| dc.author.google | Park, WI | - |
| dc.author.google | Yi, GC | - |
| dc.relation.volume | 30 | - |
| dc.relation.issue | 10 | - |
| dc.relation.journal | JOURNAL OF ELECTRONIC MATERIALS | - |
| dc.relation.index | SCI급, SCOPUS 등재논문 | - |
| dc.relation.sci | SCI | - |
| dc.collections.name | Journal Papers | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | JOURNAL OF ELECTRONIC MATERIALS, v.30, no.10, pp.L32 - L35 | - |
| dc.identifier.wosid | 000171658300017 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.endPage | L35 | - |
| dc.citation.number | 10 | - |
| dc.citation.startPage | L32 | - |
| dc.citation.title | JOURNAL OF ELECTRONIC MATERIALS | - |
| dc.citation.volume | 30 | - |
| dc.contributor.affiliatedAuthor | Yi, GC | - |
| dc.identifier.scopusid | 2-s2.0-0035484333 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 46 | - |
| dc.type.docType | Article | - |
| dc.subject.keywordAuthor | ZnO | - |
| dc.subject.keywordAuthor | metal organic chemical vapor deposition (MOCVD) | - |
| dc.subject.keywordAuthor | photoluminescence | - |
| dc.subject.keywordAuthor | SiO2/Si substrate | - |
| dc.subject.keywordAuthor | stimulated emission | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
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Related Researcher
- 이규철YI, GYU CHUL
- Dept of Materials Science & Enginrg