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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yi, GC | - |
| dc.contributor.author | Il Park, W | - |
| dc.date.accessioned | 2016-03-31T13:15:25Z | - |
| dc.date.available | 2016-03-31T13:15:25Z | - |
| dc.date.created | 2009-02-28 | - |
| dc.date.issued | 2001-07 | - |
| dc.identifier.issn | 0021-4922 | - |
| dc.identifier.other | 2001-OAK-0000002166 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/19419 | - |
| dc.description.abstract | The nature of Se donors in GaN was investigated using temperature dependent photoluminescence spectroscopy. Near-bandedge emission of the doped films was investigated at temperatures between 15-300 K. Based on the temperature dependence of the near-bandedge emission, the Se donor level in GaN was estimated to be 38 +/- 4 meV below the conduction band minimum. | - |
| dc.description.statementofresponsibility | X | - |
| dc.language | English | - |
| dc.publisher | INST PURE APPLIED PHYSICS | - |
| dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | - |
| dc.subject | Se-doped GaN | - |
| dc.subject | photoluminescence spectroscopy | - |
| dc.subject | metal-organic vapor phase epitaxy | - |
| dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
| dc.subject | N-TYPE GAN | - |
| dc.subject | ENERGY | - |
| dc.subject | FILMS | - |
| dc.subject | DONORS | - |
| dc.subject | MG | - |
| dc.title | Photoluminescent properties of Se-doped GaN | - |
| dc.type | Article | - |
| dc.contributor.college | 신소재공학과 | - |
| dc.identifier.doi | 10.1143/JJAP.40.4470 | - |
| dc.author.google | Yi, GC | - |
| dc.author.google | Il Park, W | - |
| dc.relation.volume | 40 | - |
| dc.relation.issue | 7 | - |
| dc.relation.startpage | 4470 | - |
| dc.relation.lastpage | 4474 | - |
| dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | - |
| dc.relation.index | SCI급, SCOPUS 등재논문 | - |
| dc.relation.sci | SCI | - |
| dc.collections.name | Journal Papers | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.40, no.7, pp.4470 - 4474 | - |
| dc.identifier.wosid | 000170772500008 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.endPage | 4474 | - |
| dc.citation.number | 7 | - |
| dc.citation.startPage | 4470 | - |
| dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | - |
| dc.citation.volume | 40 | - |
| dc.contributor.affiliatedAuthor | Yi, GC | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 1 | - |
| dc.type.docType | Article | - |
| dc.subject.keywordAuthor | Se-doped GaN | - |
| dc.subject.keywordAuthor | photoluminescence spectroscopy | - |
| dc.subject.keywordAuthor | metal-organic vapor phase epitaxy | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
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Related Researcher
- 이규철YI, GYU CHUL
- Dept of Materials Science & Enginrg