DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, KJ | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2016-03-31T13:17:01Z | - |
dc.date.available | 2016-03-31T13:17:01Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2001-07 | - |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.other | 2001-OAK-0000002085 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/19478 | - |
dc.description.abstract | The effects of hot-electron stress on electrical properties in AlGaAs/InGaAs pseudomorphic high electron mobility transistors were investigated using current-voltage (I-V), capacitance-voltage (C-V), deep level transient spectroscopy (DLTS), and transconductance dispersion measurements. After hot-electron stress, the three-terminal gate-drain breakdown characteristics were improved and the gate-drain capacitance was decreased even though no difference was found in both DLTS and transconductance dispersion results. These results suggest that hot electrons were trapped at the interface of the passivation layer, Si3N4, with AlGaAs, locating between gate and source/drain electrodes, leading to the increase of the depletion region under the ungated region. On the other hand, the two-terminal gate-drain breakdown characteristics were deteriorated by hot-electron stress. This was due to the reduction of the Schottky barrier height. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | MINERALS METALS MATERIALS SOC | - |
dc.relation.isPartOf | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.subject | two-terminal | - |
dc.subject | three-terminal breakdown | - |
dc.subject | hot-electron stress | - |
dc.subject | AlGaAs/InGaAs | - |
dc.subject | MOBILITY TRANSISTOR | - |
dc.subject | GAAS | - |
dc.subject | HEMTS | - |
dc.title | Effects of hot-electron stress on electrical performances in AlGaAs/InGaAs pseudomorphic high electron transistors | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1007/s11664-001-0076-1 | - |
dc.author.google | Choi, KJ | - |
dc.author.google | Lee, JL | - |
dc.relation.volume | 30 | - |
dc.relation.issue | 7 | - |
dc.relation.startpage | 885 | - |
dc.relation.lastpage | 890 | - |
dc.contributor.id | 10105416 | - |
dc.relation.journal | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF ELECTRONIC MATERIALS, v.30, no.7, pp.885 - 890 | - |
dc.identifier.wosid | 000169911000019 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 890 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 885 | - |
dc.citation.title | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.citation.volume | 30 | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-0035392314 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 7 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | MOBILITY TRANSISTOR | - |
dc.subject.keywordPlus | GAAS | - |
dc.subject.keywordPlus | HEMTS | - |
dc.subject.keywordAuthor | two-terminal | - |
dc.subject.keywordAuthor | three-terminal breakdown | - |
dc.subject.keywordAuthor | hot-electron stress | - |
dc.subject.keywordAuthor | AlGaAs/InGaAs | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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