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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ryu, S | - |
| dc.contributor.author | Im, J | - |
| dc.contributor.author | Kang, S | - |
| dc.contributor.author | Kim, B | - |
| dc.date.accessioned | 2016-03-31T13:17:05Z | - |
| dc.date.available | 2016-03-31T13:17:05Z | - |
| dc.date.created | 2009-03-18 | - |
| dc.date.issued | 2001-07 | - |
| dc.identifier.issn | 0374-4884 | - |
| dc.identifier.other | 2001-OAK-0000002081 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/19481 | - |
| dc.description.abstract | A multilayer process based on polyimide has been developed, and a passive component library for the process has been established. A two-stage amplifier using these passive components has been designed and fabricated. For the design, three layers of polyimide were used for capacitors and microstrip lines. The reactive ion etching: process for via-hole connection through polyimide was used. The main circuit was fabricated on the top layer. The fabricated amplifier showed a gain of 11.5 dB at 8.5 GHz. Also the chip size is considerably reduced in size because of the multilayer structure. | - |
| dc.description.statementofresponsibility | X | - |
| dc.language | English | - |
| dc.publisher | KOREAN PHYSICAL SOC | - |
| dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
| dc.subject | POLYIMIDE | - |
| dc.title | Fabrication of an X-band amplifier using a multilayer process | - |
| dc.type | Article | - |
| dc.contributor.college | 전자전기공학과 | - |
| dc.author.google | Ryu, S | - |
| dc.author.google | Im, J | - |
| dc.author.google | Kang, S | - |
| dc.author.google | Kim, B | - |
| dc.relation.volume | 39 | - |
| dc.relation.issue | 1 | - |
| dc.relation.startpage | 4 | - |
| dc.relation.lastpage | 7 | - |
| dc.contributor.id | 10106173 | - |
| dc.relation.journal | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
| dc.relation.index | SCI급, SCOPUS 등재논문 | - |
| dc.relation.sci | SCI | - |
| dc.collections.name | Journal Papers | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, no.1, pp.4 - 7 | - |
| dc.identifier.wosid | 000169870600002 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.endPage | 7 | - |
| dc.citation.number | 1 | - |
| dc.citation.startPage | 4 | - |
| dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
| dc.citation.volume | 39 | - |
| dc.contributor.affiliatedAuthor | Kim, B | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 1 | - |
| dc.type.docType | Article | - |
| dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.description.journalRegisteredClass | kci | - |
| dc.description.journalRegisteredClass | other | - |
| dc.relation.journalResearchArea | Physics | - |
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Related Researcher
- 김범만KIM, BUM MAN
- Dept of Electrical Enginrg