DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, CC | - |
dc.contributor.author | Je, JH | - |
dc.contributor.author | Yi, MS | - |
dc.contributor.author | Noh, DY | - |
dc.contributor.author | Degave, F | - |
dc.contributor.author | Ruterana, P | - |
dc.date.accessioned | 2016-03-31T13:18:49Z | - |
dc.date.available | 2016-03-31T13:18:49Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2001-05-22 | - |
dc.identifier.issn | 0921-5107 | - |
dc.identifier.other | 2001-OAK-0000001992 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/19546 | - |
dc.description.abstract | The microstructure in GaN nucleation layers was studied in synchrotron X-ray scattering and transmission electron microscopy experiments. We revealed the existence of tensile-strained interfacial domains, which was originated from 6/7 matched interface structure. (C) 2001 Elsevier Science S.A. All rights reserved. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.relation.isPartOf | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | - |
dc.subject | GaN | - |
dc.subject | nucleation layer | - |
dc.subject | microstructure | - |
dc.subject | tensile strain | - |
dc.subject | interface structure | - |
dc.subject | LIGHT-EMITTING-DIODES | - |
dc.subject | X-RAY-SCATTERING | - |
dc.subject | BLUE | - |
dc.subject | EPITAXY | - |
dc.title | Microstructure of GaN nucleation layer during initial stage MOCVD growth | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1016/S0921-5107(00)00757-1 | - |
dc.author.google | Kim, CC | - |
dc.author.google | Je, JH | - |
dc.author.google | Yi, MS | - |
dc.author.google | Noh, DY | - |
dc.author.google | Degave, F | - |
dc.author.google | Ruterana, P | - |
dc.relation.volume | 82 | - |
dc.relation.issue | 1-3 | - |
dc.relation.startpage | 108 | - |
dc.relation.lastpage | 110 | - |
dc.contributor.id | 10123980 | - |
dc.relation.journal | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Conference Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.82, no.1-3, pp.108 - 110 | - |
dc.identifier.wosid | 000168618700032 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 110 | - |
dc.citation.number | 1-3 | - |
dc.citation.startPage | 108 | - |
dc.citation.title | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | - |
dc.citation.volume | 82 | - |
dc.contributor.affiliatedAuthor | Je, JH | - |
dc.identifier.scopusid | 2-s2.0-0035933185 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 1 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | X-RAY-SCATTERING | - |
dc.subject.keywordPlus | BLUE | - |
dc.subject.keywordPlus | EPITAXY | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | nucleation layer | - |
dc.subject.keywordAuthor | microstructure | - |
dc.subject.keywordAuthor | tensile strain | - |
dc.subject.keywordAuthor | interface structure | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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