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Cited 136 time in webofscience Cited 139 time in scopus
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dc.contributor.authorChon, U-
dc.contributor.authorYi, GC-
dc.contributor.authorJang, HM-
dc.date.accessioned2016-03-31T13:22:52Z-
dc.date.available2016-03-31T13:22:52Z-
dc.date.created2009-02-28-
dc.date.issued2001-01-29-
dc.identifier.issn0003-6951-
dc.identifier.other2001-OAK-0000001766-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/19697-
dc.description.abstractFatigue-free and highly c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films were grown on Pt/Ti/SiO2/Si(100) substrates using metalorganic solution decomposition. Films annealed above 500 degreesC were characterized by strong c-axis preferential growth with an in-plane alignment of grains. The BLT film capacitors with a Pt top electrode showed excellent ferroelectric properties. The remanent polarization (2P(r)) and the coercive field (E-c) were in the range of 26-28 muC/cm(2) and 50-75 kV/cm, respectively. More importantly, the BLT capacitors did not show any significant fatigue up to 3.5x10(10) read/write switching cycles at a frequency of 1 MHz. (C) 2001 American Institute of Physics.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.titleFatigue-free behavior of highly oriented Bi3.25La0.75Ti3O12 thin films grown on Pt/Ti/SiO2/Si(100) by metalorganic solution decomposition-
dc.typeArticle-
dc.contributor.college신소재공학과-
dc.identifier.doi10.1063/1.1333686-
dc.author.googleChon, U-
dc.author.googleYi, GC-
dc.author.googleJang, HM-
dc.relation.volume78-
dc.relation.issue5-
dc.relation.startpage658-
dc.relation.lastpage660-
dc.contributor.id10084272-
dc.relation.journalAPPLIED PHYSICS LETTERS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.78, no.5, pp.658 - 660-
dc.identifier.wosid000166737500033-
dc.date.tcdate2019-01-01-
dc.citation.endPage660-
dc.citation.number5-
dc.citation.startPage658-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume78-
dc.contributor.affiliatedAuthorYi, GC-
dc.contributor.affiliatedAuthorJang, HM-
dc.identifier.scopusid2-s2.0-0001654489-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc131-
dc.type.docTypeArticle-
dc.subject.keywordPlusBISMUTH TITANATE-
dc.subject.keywordPlusMEMORIES-
dc.subject.keywordPlusDEPOSITION-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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장현명JANG, HYUN MYUNG
Div of Advanced Materials Science
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