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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, N | - |
| dc.contributor.author | Doh, YJ | - |
| dc.contributor.author | Chang, HS | - |
| dc.contributor.author | Lee, HJ | - |
| dc.date.accessioned | 2016-03-31T13:24:26Z | - |
| dc.date.available | 2016-03-31T13:24:26Z | - |
| dc.date.created | 2009-03-20 | - |
| dc.date.issued | 2000-11 | - |
| dc.identifier.issn | 0921-4534 | - |
| dc.identifier.other | 2001-OAK-0000001685 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/19755 | - |
| dc.description.abstract | It is found that radio-frequency irradiation significantly enhances the c-axis resistance near the superconducting transition of the CuO2 bi-layer located on the surface of a Bi2Sr2CaCu2O8+x single crystal. The features of this resistance anomaly are similar to those observed recently in the mesoscopic aluminum wires and structures with normal-metal/supeconductor interfaces, where the resistance anomaly is caused by the nonequilibrium charge-imbalance effect. | - |
| dc.description.statementofresponsibility | X | - |
| dc.language | English | - |
| dc.publisher | ELSEVIER SCIENCE BV | - |
| dc.relation.isPartOf | PHYSICA C | - |
| dc.subject | WIRES | - |
| dc.title | Resistance enhancement of the intrinsic surface junction of Bi2Sr2CaCu2O8+x single crystal under radio-frequency irradiation | - |
| dc.type | Article | - |
| dc.contributor.college | 물리학과 | - |
| dc.identifier.doi | 10.1016/S0921-4534(00)01337-X | - |
| dc.author.google | Kim, N | - |
| dc.author.google | Doh, YJ | - |
| dc.author.google | Chang, HS | - |
| dc.author.google | Lee, HJ | - |
| dc.relation.volume | 341 | - |
| dc.relation.startpage | 1563 | - |
| dc.relation.lastpage | 1564 | - |
| dc.contributor.id | 10080084 | - |
| dc.relation.journal | PHYSICA C | - |
| dc.relation.index | SCI급, SCOPUS 등재논문 | - |
| dc.relation.sci | SCI | - |
| dc.collections.name | Conference Papers | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | PHYSICA C, v.341, pp.1563 - 1564 | - |
| dc.identifier.wosid | 000165855900056 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.endPage | 1564 | - |
| dc.citation.startPage | 1563 | - |
| dc.citation.title | PHYSICA C | - |
| dc.citation.volume | 341 | - |
| dc.contributor.affiliatedAuthor | Lee, HJ | - |
| dc.identifier.scopusid | 2-s2.0-0342527700 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 3 | - |
| dc.type.docType | Article; Proceedings Paper | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
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Related Researcher
- 이후종LEE, HU JONG
- Dept of Physics