DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, YK | - |
dc.contributor.author | Lee, KM | - |
dc.contributor.author | Jang, HM | - |
dc.date.accessioned | 2016-03-31T13:27:39Z | - |
dc.date.available | 2016-03-31T13:27:39Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2000-10 | - |
dc.identifier.issn | 0022-2461 | - |
dc.identifier.other | 2000-OAK-0000001519 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/19875 | - |
dc.description.abstract | The nature of the B-site cation ordering and the associated defect process necessary to stabilize the ordered domains were investigated using the WO3-doped Ba(Mg1/3Ta2/3)O-3 (BMT) system as a typical example of Ba(B'B-1/3"(2/3))O-3-type complex perovskites. It was shown that only the 1 : 2 long-range ordering of the B-site cation existed in both undoped and WO3-doped BMT perovskites. The atomic defect mechanism associated with the stoichiometric 1 : 2 long-range ordering was systematically investigated. It is concluded that the substitution of W6+ for Ta5+ in the WO3-doped BMT enhances the degree of the 1 : 2 long-range ordering and produces the positively charged W-Ta(.) sites with a concomitant generation of tantalum vacancies (V-Ta''''') and mobile oxygen vacancies (V-O(..)) for the ionic charge compensation. (C) 2000 Kluwer Academic Publishers. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | KLUWER ACADEMIC PUBL | - |
dc.relation.isPartOf | JOURNAL OF MATERIALS SCIENCE | - |
dc.subject | PB(MG1/3NB2/3)O-3 RELAXOR FERROELECTRICS | - |
dc.subject | MICROWAVE DIELECTRIC-PROPERTIES | - |
dc.subject | RESONATOR MATERIALS | - |
dc.subject | CERAMICS | - |
dc.subject | BA(ZN1/3TA2/3)O3 | - |
dc.title | 1 : 2 Long-range ordering and defect mechanism of WO3-doped perovskite Ba(Mg1/3Ta2/3)O-3 | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1023/A:1004861821045 | - |
dc.author.google | Kim, YK | - |
dc.author.google | Lee, KM | - |
dc.author.google | Jang, HM | - |
dc.relation.volume | 35 | - |
dc.relation.issue | 19 | - |
dc.relation.startpage | 4885 | - |
dc.relation.lastpage | 4893 | - |
dc.contributor.id | 10084272 | - |
dc.relation.journal | JOURNAL OF MATERIALS SCIENCE | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS SCIENCE, v.35, no.19, pp.4885 - 4893 | - |
dc.identifier.wosid | 000089053600020 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 4893 | - |
dc.citation.number | 19 | - |
dc.citation.startPage | 4885 | - |
dc.citation.title | JOURNAL OF MATERIALS SCIENCE | - |
dc.citation.volume | 35 | - |
dc.contributor.affiliatedAuthor | Jang, HM | - |
dc.identifier.scopusid | 2-s2.0-0034301243 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 13 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | PB(MG1/3NB2/3)O-3 RELAXOR FERROELECTRICS | - |
dc.subject.keywordPlus | MICROWAVE DIELECTRIC-PROPERTIES | - |
dc.subject.keywordPlus | RESONATOR MATERIALS | - |
dc.subject.keywordPlus | CERAMICS | - |
dc.subject.keywordPlus | BA(ZN1/3TA2/3)O3 | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
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