DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, SI | - |
dc.contributor.author | Cho, TS | - |
dc.contributor.author | Doh, SJ | - |
dc.contributor.author | Lee, JL | - |
dc.contributor.author | Je, JH | - |
dc.date.accessioned | 2016-03-31T13:29:29Z | - |
dc.date.available | 2016-03-31T13:29:29Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2000-07-17 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2000-OAK-0000001416 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/19944 | - |
dc.description.abstract | The structural evolution during heteroepitaxial growth of ZnO/sapphire(001) by radio-frequency magnetron sputtering has been studied using real-time synchrotron x-ray scattering. The two-dimensional (2D) ZnO(002) layers grown in the initial stage are highly strained and well aligned to the substrate having a mosaic distribution of 0.01 degrees full width at half maximum (FWHM), in sharp contrast to the reported transition 2D layers grown by molecular-beam epitaxy. With increasing film thickness, the lattice strain is relieved and the poorly aligned (1.25 degrees FWHM) three-dimensional (3D) islands are nucleated on the 2D layers. We attribute the 2D-3D transition to the release of the strain energy stored in the film due to the film/substrate lattice mismatch. (C) 2000 American Institute of Physics. [S0003-6951(00)01529-1]. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.title | Structural evolution of ZnO/sapphire(001) heteroepitaxy studied by real time synchrotron x-ray scattering | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1063/1.126972 | - |
dc.author.google | Park, SI | - |
dc.author.google | Cho, TS | - |
dc.author.google | Doh, SJ | - |
dc.author.google | Lee, JL | - |
dc.author.google | Je, JH | - |
dc.relation.volume | 77 | - |
dc.relation.issue | 3 | - |
dc.relation.startpage | 349 | - |
dc.relation.lastpage | 351 | - |
dc.contributor.id | 10123980 | - |
dc.relation.journal | APPLIED PHYSICS LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.77, no.3, pp.349 - 351 | - |
dc.identifier.wosid | 000088052200013 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 351 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 349 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 77 | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.contributor.affiliatedAuthor | Je, JH | - |
dc.identifier.scopusid | 2-s2.0-0010522057 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 45 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | ZNO | - |
dc.subject.keywordPlus | EMISSION | - |
dc.subject.keywordPlus | LAYERS | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | PLANE | - |
dc.subject.keywordPlus | TIN | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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