Fabrication of self-assembled quantum dots in lattice-matched GaAs/AlGaAs system
SCIE
SCOPUS
- Title
- Fabrication of self-assembled quantum dots in lattice-matched GaAs/AlGaAs system
- Authors
- Lee, CD; Lee, HJ; Noh, SK; Park, C; Park, CG; Park, SJ; Lee, KS
- Date Issued
- 1998-11
- Publisher
- KOREAN PHYSICAL SOC
- Abstract
- The formation of self-assembled nanoscale GaAs islands on AlGaAs is demonstrated through the low-temperature molecular beam epitaxy combined with the droplet epitaxy. During the growth of GaAs on the (1 x 1) surface of AlGaAs layer, spotty feature with [111] streaks was observed in the electron diffraction pattern and the resulting nanometer-scale GaAs islands showed {111} facets in surface morphology. Three dimensional growth of GaAs quatum dots is attributed to the limited surface migration of Ga adatoms on the highly As-contained surface at low substrate temperature.
- Keywords
- GROWTH; GAAS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/20580
- ISSN
- 0374-4884
- Article Type
- Article
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 33, page. S262 - S265, 1998-11
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- There are no files associated with this item.
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