Improved uniformity of contact resistance in GaAs MESFET using Pd/Ge/Ti/Au ohmic contacts
SCIE
SCOPUS
- Title
- Improved uniformity of contact resistance in GaAs MESFET using Pd/Ge/Ti/Au ohmic contacts
- Authors
- Kwak, JS; Lee, JL; Baik, HK
- Date Issued
- 1998-12
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGI
- Abstract
- Improved contact resistance uniformity, with a low resistance on high-low doped GaAs MESFET, was demonstrated using a Pd/Ge/Ti/Au ohmic contact. The lowest contact resistivity obtained was 2.8 x 10(-6) Ohm-cm(2). The average value and standard deviation (Delta Rc) of the contact resistance (Rc) were 0.73 and 0.07 Ohm-mm, respectively, which were more uniform than those for AuGe/Ni contacts with an average Rc of 0.77 Ohm-mm and Delta Rc of 0.16 Ohm-mm. The improved uniformity was attributed to the uniform penetration of the ohmic junction into the buried high-doped channel layer by solid-state reactions, resulting in the improved uniformity of device performance.
- Keywords
- POWER
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/20586
- DOI
- 10.1109/55.735753
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 19, no. 12, page. 481 - 483, 1998-12
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