Low-frequency noise characterization of self-aligned AlGaAs/GaAs heterojunction bipolar transistors with a noise corner frequency below 3 kHz
SCIE
SCOPUS
- Title
- Low-frequency noise characterization of self-aligned AlGaAs/GaAs heterojunction bipolar transistors with a noise corner frequency below 3 kHz
- Authors
- Shin, JH; Kim, JY; Chung, YJ; Lee, JW; Suh, YS; Ahn, KH; Kim, BM
- Date Issued
- 1998-11
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGI
- Abstract
- To find dominant 1/f noise sources, generalized noise analyses have been performed for self-aligned AlGaAs/GaAs heterojunction bipolar transistors (HBT's). For shorted base-emitter condition, the resistance fluctuation 1/f noise is dominant, while for open base-emitter condition, the base-emitter current 1/f noise is dominant. The collector-emitter 1/f current noise, though generally considered an important noise source, is negligible. The resistance 1/f noise stems mainly from the emitter resistance fluctuation. Our noise-reduction works are focused on the reduction of the base-emitter current 1/f noise, We have investigated the base-emitter-current noise properties as a function of emitter-base structure and surface passivation condition. It is found that the surface-recombination 1/f noise can be significantly reduced by the heterojunction launcher of the abrupt junction with 30% aluminum mole fraction emitter. The depleted AlGaAs ledge surface passivation further suppresses the surface-recombination currents. Consequently, we have achieved a very low 1/f noise corner frequency of 2.8 kHz at the collector current density of 10 kA/cm(2), The dominant noise source of the HBT is not a surface-recombination current, but a bulk current noise. This is the lowest 1/f noise corner frequency among the III-V compound semiconductor transistors, and is comparable to those of low-noise Si bipolar junction transistors (BJT's).
- Keywords
- heterojunction bipolar transistor; 1/f noise; oscillator; phase noise; SURFACE PASSIVATION LAYER; EMITTER-BASE JUNCTION; 1/F NOISE; HBT OSCILLATOR; PHASE NOISE; GAAS; TRANSPORT; BJTS; GAIN
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/20591
- DOI
- 10.1109/22.734534
- ISSN
- 0018-9480
- Article Type
- Article
- Citation
- IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, vol. 46, no. 11, page. 1604 - 1613, 1998-11
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.