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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, JL | - |
| dc.contributor.author | Choi, KJ | - |
| dc.date.accessioned | 2016-03-31T13:52:23Z | - |
| dc.date.available | 2016-03-31T13:52:23Z | - |
| dc.date.created | 2009-02-28 | - |
| dc.date.issued | 1998-05-28 | - |
| dc.identifier.issn | 0013-5194 | - |
| dc.identifier.other | 1998-OAK-0000000272 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/20742 | - |
| dc.description.abstract | A newly developed sulphur diffusion method for fabricating GaAs FETs is demonstrated. Sulphur atoms adsorbed at the surface of GaAs by the (NH(4))(2)S(x) treatment were diffused into GaAs during rapid thermal annealing. Transconductance as high as 190mS/mm was obtained for MESFETs with 1.0 mu m gate length, fabricated on the lavers diffused by this technique. This diffusion technique was found to be suitable for GaAs device fabrication. | - |
| dc.description.statementofresponsibility | X | - |
| dc.language | English | - |
| dc.publisher | IEE-INST ELEC ENG | - |
| dc.relation.isPartOf | ELECTRONICS LETTERS | - |
| dc.subject | POWER | - |
| dc.title | GaAs MESFET fabrication using (NH4)(2)S-x solution sulphur diffusion technique | - |
| dc.type | Article | - |
| dc.contributor.college | 신소재공학과 | - |
| dc.identifier.doi | 10.1049/el:19980819 | - |
| dc.author.google | LEE, JL | - |
| dc.author.google | CHOI, KJ | - |
| dc.relation.volume | 34 | - |
| dc.relation.issue | 11 | - |
| dc.relation.startpage | 1152 | - |
| dc.relation.lastpage | 1153 | - |
| dc.contributor.id | 10105416 | - |
| dc.relation.journal | ELECTRONICS LETTERS | - |
| dc.relation.index | SCI급, SCOPUS 등재논문 | - |
| dc.relation.sci | SCI | - |
| dc.collections.name | Journal Papers | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | ELECTRONICS LETTERS, v.34, no.11, pp.1152 - 1153 | - |
| dc.identifier.wosid | 000074370900081 | - |
| dc.date.tcdate | 2018-03-23 | - |
| dc.citation.endPage | 1153 | - |
| dc.citation.number | 11 | - |
| dc.citation.startPage | 1152 | - |
| dc.citation.title | ELECTRONICS LETTERS | - |
| dc.citation.volume | 34 | - |
| dc.contributor.affiliatedAuthor | Lee, JL | - |
| dc.identifier.scopusid | 2-s2.0-0032075717 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.type.docType | Article | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
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Related Researcher
- 이종람LEE, JONG LAM
- Dept of Materials Science & Enginrg