Effects of segregated Ge on electrical properties of SiO2/SiGe interface
SCIE
SCOPUS
- Title
- Effects of segregated Ge on electrical properties of SiO2/SiGe interface
- Authors
- Ahn, CG; Kang, HS; Kwon, YK; Kang, B
- Date Issued
- 1998-03
- Publisher
- JAPAN J APPLIED PHYSICS
- Abstract
- The effects of segregated Ge on the electrical properties of the SiO2/SiGe interface are investigated. It is observed that the segregated Ge near the SiO2/SiGe interface, formed during oxidation of the SiGe layer, affects the threshold voltage of a metaloxide-semiconductor (MOS) structure, and that the flat-band voltage shift increases when the Ge segregation is increased. We densities of the interface states and fixed charges are measured using the capacitance-voltage (C-V) method, and the relationships between these results and the material properties are examined. From the results, the SiOx structures are responsible for the increased negative fixed charges near the SiO2/SiGe interface. The mechanism proposed for the generation of negative fixed charges is that the oxygen in the Ge pileup region forms a Si-O-Ge bonding structure initially, and then the weaker Ge-O bond can easily be broken, leaving a Si-O-dangling bond and elemental Ge. The Si-O-dangling bond assumes a negative fixed charge state by trapping an electron.
- Keywords
- oxidation; segregation; SiO2/SiGe interface; oxide charges; NBOHC; OXIDES; SIGE; IMPLANTATION; OXIDATION; PLASMA; LAYER
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/20779
- DOI
- 10.1143/JJAP.37.1316
- ISSN
- 0021-4922
- Article Type
- Article
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, vol. 37, no. 3, page. 1316 - 1319, 1998-03
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