Single-voltage-operation pseudomorphic HEMT with low current dissipation for portable power applications
SCIE
SCOPUS
- Title
- Single-voltage-operation pseudomorphic HEMT with low current dissipation for portable power applications
- Authors
- Lee, JL; Yoo, HM; Lee, GY
- Date Issued
- 1997-10-23
- Publisher
- IEE-INST ELEC ENG
- Abstract
- A low current dissipation pseudomorphic high electron mobility transistor with a single-planar-doped AlGaAs/InGaAs/GaAs heterojunction structure, operating at a 3.3V single voltage supply, has been developed with a state-of-the-art performance. It exhibits a low operating current of 87.8mA al an output power of 21.8dBm with high power-added efficiency of 51.5% at a single voltage supply condition. This operating current value is the lowest among those reported for single voltage operation power devices for portable power applications.
- Keywords
- high electron mobility transistors; cellular radio; OUTPUT POWER; MESFET
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/20865
- DOI
- 10.1049/el:19971271
- ISSN
- 0013-5194
- Article Type
- Article
- Citation
- ELECTRONICS LETTERS, vol. 33, no. 22, page. 1909 - 1910, 1997-10-23
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- There are no files associated with this item.
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