Remote plasma enhanced metalorganic chemical vapor deposition of TiN from tetrakis-dimethyl-amido-titanium
SCIE
SCOPUS
- Title
- Remote plasma enhanced metalorganic chemical vapor deposition of TiN from tetrakis-dimethyl-amido-titanium
- Authors
- Yun, JY; Rhee, SW; Park, S; Lee, JG
- Date Issued
- 2000-11
- Publisher
- AMER INST PHYSICS
- Abstract
- Effect of H-2 and N-2 plasma in the remote plasma enhanced metalorganic chemical vapor deposition of TiN (titanium nitride) from tetrakis-dimethyl-amido-titanium was studied in the deposition temperature range of 200-400 degreesC. The deposition rate with H-2 plasma is faster than with N-2 plasma and both processes showed similar activation energies, 16.7 and 18.3 kcal/mol, in the deposition temperature range of 200-300 degreesC. Above this temperature range, the deposition rate was decreased due to the gas phase dissociation of the precursor. H-2 plasma was effective in removing hydrocarbon impurities and carbon was incorporated as a form of TiC but with N-2 plasma, TiN film was formed with rough surface due to the incorporation of free carbon. The film with H-2 plasma showed low resistivity due to the lower incorporation of free carbon. (C) 2000 American Vacuum Society. [S0734-2101(00)04206-8].
- Keywords
- BARRIER METALLIZATION; TETRAKIS(DIMETHYLAMIDO)TITANIUM; SUBMICRON; NITRIDE; TICN; GAS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/21010
- DOI
- 10.1116/1.1316103
- ISSN
- 0734-2101
- Article Type
- Article
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, vol. 18, no. 6, page. 2822 - 2826, 2000-11
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