DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, KS | - |
dc.contributor.author | Shim, HS | - |
dc.contributor.author | Kim, SH | - |
dc.date.accessioned | 2016-03-31T14:02:36Z | - |
dc.date.available | 2016-03-31T14:02:36Z | - |
dc.date.created | 2009-03-05 | - |
dc.date.issued | 2000-04 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.other | 2000-OAK-0000010215 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/21043 | - |
dc.description.abstract | The low-temperature growth of GaN on (0 0 0 1) sapphire substrates was studied using excited neutral nitrogen molecules as an approach to avoid ion damage in the ion beam assisted evaporation process. The excited neutral nitrogen molecules (N-2*), together with nitrogen ions (N-2(+)), were produced by electron impact in the discharge chamber encased in the ion source. To selectively extract N-2*, the single grid configuration was replaced by a grounded triple grid configuration, through which the flux of ionic species to the growing film surface was significantly reduced. The crystallinity and luminescent properties of GaN films were greatly improved due to the increasing ratio flux of excited neutral/ion in the triple-grid configuration. TEM results inferred that the bombardment of ion beam on the growing GaN surface can induce a significant residual stress and more defects, compared to the excited neutral beam. The effect of the non-ionic nitrogen species on the film crystallinity is discussed in the aspect of kinetic energy. As the discharge voltage of the ion source increased, more energetic neutrals were generated by the charge transfer collision between nitrogen ions and thermal neutrals, and degraded the properties of GaN film. (C) 2000 Elsevier Science B.V. All rights reserved. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.relation.isPartOf | JOURNAL OF CRYSTAL GROWTH | - |
dc.subject | Kaufmann ion source | - |
dc.subject | triple grounded grid configuration | - |
dc.subject | excited neutral nitrogen molecule | - |
dc.subject | charge-transferred fast neutral | - |
dc.subject | crystallinity | - |
dc.subject | luminescent property | - |
dc.subject | III-V-NITRIDE | - |
dc.subject | EPITAXY | - |
dc.subject | WURTZITE | - |
dc.subject | KINETICS | - |
dc.title | Effect of nitrogen species and energy on the crystallinity and luminescent properties of GaN films grown by the reactive neutral beam-assisted evaporation process | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1016/S0022-0248(99)00872-6 | - |
dc.author.google | Kim, KS | - |
dc.author.google | Shim, HS | - |
dc.author.google | Kim, SH | - |
dc.relation.volume | 212 | - |
dc.relation.issue | 1-2 | - |
dc.relation.startpage | 74 | - |
dc.relation.lastpage | 82 | - |
dc.contributor.id | 10077433 | - |
dc.relation.journal | JOURNAL OF CRYSTAL GROWTH | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.212, no.1-2, pp.74 - 82 | - |
dc.identifier.wosid | 000086678100011 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 82 | - |
dc.citation.number | 1-2 | - |
dc.citation.startPage | 74 | - |
dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.volume | 212 | - |
dc.contributor.affiliatedAuthor | Kim, SH | - |
dc.identifier.scopusid | 2-s2.0-33728180 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 2 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | III-V-NITRIDE | - |
dc.subject.keywordPlus | EPITAXY | - |
dc.subject.keywordPlus | WURTZITE | - |
dc.subject.keywordPlus | KINETICS | - |
dc.subject.keywordAuthor | Kaufmann ion source | - |
dc.subject.keywordAuthor | triple grounded grid configuration | - |
dc.subject.keywordAuthor | excited neutral nitrogen molecule | - |
dc.subject.keywordAuthor | charge-transferred fast neutral | - |
dc.subject.keywordAuthor | crystallinity | - |
dc.subject.keywordAuthor | luminescent property | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
library@postech.ac.kr Tel: 054-279-2548
Copyrights © by 2017 Pohang University of Science ad Technology All right reserved.