Metalorganic chemical vapor deposition of aluminum from tetramethylethylenediamine alane
SCIE
SCOPUS
- Title
- Metalorganic chemical vapor deposition of aluminum from tetramethylethylenediamine alane
- Authors
- Kim, DH; Park, MY; Rhee, SW
- Date Issued
- 1999-06
- Publisher
- KLUWER ACADEMIC PUBL
- Abstract
- Tetramethylethylenediamine alane (TMEDAA) was synthesized by ligand displacement reaction of dimethylethylamine alane (DMEAA) with N,N,N'N'-tetramethylethylendiamine (TMEDA), and the chemical vapor deposition of aluminum film from TMEDAA in the temperature range of 140-260 degrees C has been studied. The maximum deposition rate of Al film from TMEDAA was 140 nm/min at 210 degrees C and the apparent activation energy over a substrate temperature range of 140-210 degrees C is about 58.6 kJ/mol. Al films were deposited on TiN/Si substrate and electrical resistivity values in the range 5-35 mu Omega cm were obtained. The incorporation of carbon and oxygen, and surface roughness were increased as the substrate temperature was increased. The Al films with a preferred orientation of (111) were obtained over a wide range of substrate temperature.
- Keywords
- DIMETHYLETHYLAMINE ALANE; THIN-FILMS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/21070
- DOI
- 10.1023/A:1008920701316
- ISSN
- 0957-4522
- Article Type
- Article
- Citation
- JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol. 10, no. 4, page. 285 - 290, 1999-06
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