Metal-organic chemical vapor deposition of aluminum from dimethylethylamine alane

Abstract

Deposition rate, electrical resistivity, microstructure, surface roughness, and preferred orientation of aluminum films from metal-organic chemical vapor deposition (MOCVD) with dimethylethylamine alane (DMEAA) were investigated. Maximum deposition rate was obtained at around 150 degrees C in the substrate temperature range of 100-300 degrees C. High purity Al film:, with electrical resistivity close to bulk Al was obtained. Films deposited at the substrate temperature of 130 degrees C and 160 degrees C :had columnar and equiaxed grains, respectively and in the film deposited at the substrate temperature of 210 degrees C, block-like grains were observed. Film deposited at the substrate temperature of 260 degrees C had faceted grains with voids between the grains. Surface roughness of Al film and the degree of preferred orientation of Al film were decreased as the substrate temperature was increased. The Al surface became rough with the increase of the film thickness. (C) 1998 Elsevier Science S.A.