DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, C | - |
dc.contributor.author | Park, CG | - |
dc.contributor.author | Lee, CD | - |
dc.contributor.author | Noh, SK | - |
dc.date.accessioned | 2016-03-31T14:08:49Z | - |
dc.date.available | 2016-03-31T14:08:49Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 1997-09 | - |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.other | 1997-OAK-0000009894 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/21232 | - |
dc.description.abstract | InGaAs/GaAs superlattice was grown by molecular beam epitaxy (MBE) on GaAs (100) substrate at low substrate temperature (250 degrees C). The as-grown superlattice sample was then annealed at various temperatures for 10 min. The as-grown superlattice was pseudomorphic and stable up to 800 degrees C annealing. Annealing at 850 degrees C or higher temperatures, however, caused strain relaxation accompanying with dislocation generation at the As precipitate. Dislocation generation at the As precipitate was influenced by two factors. The one is lattice mismatch between GaAs and As precipitate, and the other is elastic interaction force acting on the As precipitate. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | MINERALS METALS MATERIALS SOC | - |
dc.relation.isPartOf | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.subject | As precipitate | - |
dc.subject | dislocation generation | - |
dc.subject | low temperature growth | - |
dc.subject | MOLECULAR-BEAM EPITAXY | - |
dc.subject | GAAS | - |
dc.title | Structural stability of low temperature grown InGaAs/GaAs heterostructure | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1007/s11664-997-0243-0 | - |
dc.author.google | PARK, C | - |
dc.author.google | PARK, CG | - |
dc.author.google | LEE, CD | - |
dc.author.google | NOH, SK | - |
dc.relation.volume | 26 | - |
dc.relation.issue | 9 | - |
dc.relation.startpage | 1053 | - |
dc.relation.lastpage | 1057 | - |
dc.contributor.id | 10069857 | - |
dc.relation.journal | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Conference Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF ELECTRONIC MATERIALS, v.26, no.9, pp.1053 - 1057 | - |
dc.identifier.wosid | A1997XW11300014 | - |
dc.date.tcdate | 2018-12-01 | - |
dc.citation.endPage | 1057 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 1053 | - |
dc.citation.title | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.citation.volume | 26 | - |
dc.contributor.affiliatedAuthor | Park, CG | - |
dc.identifier.scopusid | 2-s2.0-3943056118 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 4 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | As precipitate | - |
dc.subject.keywordAuthor | dislocation generation | - |
dc.subject.keywordAuthor | low temperature growth | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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