DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, MG | - |
dc.contributor.author | Sa, SH | - |
dc.contributor.author | Park, HH | - |
dc.contributor.author | Suh, KS | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2016-03-31T14:10:42Z | - |
dc.date.available | 2016-03-31T14:10:42Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 1997-04 | - |
dc.identifier.issn | 0921-5107 | - |
dc.identifier.other | 1997-OAK-0000009804 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/21287 | - |
dc.description.abstract | Wet cleaning and successive sulfidation of GaAs with (NH4)(2)S-x solution were carried out in air or in an atmosphere controlled glove box with nitrogen, respectively. The wet cleaned GaAs was revealed to contain oxide and/or elemental forms of As and/or Ga. Successive sulfidation with (NH4)(2)S-x brought about a large decrease of surface oxides and elemental forms, and the occurrence of As-S and/or Ga-S bonds. The formation of passivation layer with sulfur was shown to be mainly dependent on the surface state of wet cleaned GaAs before the sulfidation, and especially on the presence of elemental As and Ga. The amount of sulfur bonds with As and Ga was determined by the quantity of elemental form of As and Ga generated during the surface preparation for the sulfidation. X-ray photoelectron spectroscopy was employed to investigate a chemical bonding state of wet etched and sulfidation treated GaAs surface. (C) 1997 Elsevier Science S.A. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA LAUSANNE | - |
dc.relation.isPartOf | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | - |
dc.subject | GaAs | - |
dc.subject | sulfidation mechanism | - |
dc.subject | x-ray photoelectron spectroscopy | - |
dc.title | Sulfidation mechanism of pre-cleaned GaAs surface using (NH4)(2)S-x solution | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1016/S0921-5107(96)01933-2 | - |
dc.author.google | KANG, MG | - |
dc.author.google | SA, SH | - |
dc.author.google | PARK, HH | - |
dc.author.google | SUH, KS | - |
dc.author.google | LEE, JL | - |
dc.relation.volume | 46 | - |
dc.relation.issue | 1-3 | - |
dc.relation.startpage | 65 | - |
dc.relation.lastpage | 68 | - |
dc.contributor.id | 10105416 | - |
dc.relation.journal | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Conference Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.46, no.1-3, pp.65 - 68 | - |
dc.identifier.wosid | A1997XF34800016 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 68 | - |
dc.citation.number | 1-3 | - |
dc.citation.startPage | 65 | - |
dc.citation.title | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | - |
dc.citation.volume | 46 | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-0031118126 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 5 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | GaAs | - |
dc.subject.keywordAuthor | sulfidation mechanism | - |
dc.subject.keywordAuthor | x-ray photoelectron spectroscopy | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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