DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, JS | - |
dc.contributor.author | Ahn, KH | - |
dc.contributor.author | Jeong, YH | - |
dc.contributor.author | Kim, DM | - |
dc.date.accessioned | 2016-03-31T14:14:52Z | - |
dc.date.available | 2016-03-31T14:14:52Z | - |
dc.date.created | 2009-08-05 | - |
dc.date.issued | 1996-12 | - |
dc.identifier.issn | 0924-4247 | - |
dc.identifier.other | 1997-OAK-0000009642 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/21405 | - |
dc.description.abstract | Quantum-well Hall devices based on Si-delta-doped Al0.25Ga0.2As/In0.25Ga0.75As/GaAs pseudomorphic heterostructure materials grown by the low-pressure metal organic chemical vapour deposition (LP-MOCVD) method have been successfully fabricated. A Si-delta-doped GaAs layer is introduced for the first time in the Hall device to reduce the thermal variation of electron concentrations and to improve its temperature characteristics. A high electron mobility of 8100 cm(2) V-1 s(-1) with a sheet carrier density of 1.5 X 10(12) cm(-2) has been achieved at room temperature. A temperature coefficient of - 0.015% K-1 with a product sensitivity of 420 V A(-1) T-1 has been obtained. High signal-to-noise (S/N) ratios corresponding to minimum detectable magnetic fields (B-min) of 60 nT at 1 kHz and 110 nT at 100 Hz have been attained due to the reduced low-frequency noise from DX centres and the high mobility, These data belong to one of the best reported results. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA LAUSANNE | - |
dc.relation.isPartOf | SENSORS AND ACTUATORS A-PHYSICAL | - |
dc.subject | quantum-well Hall devices | - |
dc.subject | Si-delta-doping | - |
dc.subject | low-pressure metal organic chemical vapour deposition (LP-MOCVD) | - |
dc.subject | HETEROSTRUCTURES | - |
dc.subject | SENSORS | - |
dc.subject | DC | - |
dc.title | Highly sensitive Al0.25Ga0.75As/In0.25Ga0.75As/GaAs quantum-well Hall devices with Si-delta-doped GaAs layer grown by LP-MOCVD | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1016/S0924-4247(97)80112-4 | - |
dc.author.google | Lee, JS | - |
dc.author.google | Ahn, KH | - |
dc.author.google | Jeong, YH | - |
dc.author.google | Kim, DM | - |
dc.relation.volume | 57 | - |
dc.relation.issue | 3 | - |
dc.relation.startpage | 183 | - |
dc.relation.lastpage | 185 | - |
dc.contributor.id | 10106021 | - |
dc.relation.journal | SENSORS AND ACTUATORS A-PHYSICAL | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | SENSORS AND ACTUATORS A-PHYSICAL, v.57, no.3, pp.183 - 185 | - |
dc.identifier.wosid | A1996WX48300004 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 185 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 183 | - |
dc.citation.title | SENSORS AND ACTUATORS A-PHYSICAL | - |
dc.citation.volume | 57 | - |
dc.contributor.affiliatedAuthor | Jeong, YH | - |
dc.identifier.scopusid | 2-s2.0-0030374316 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 14 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | SENSORS | - |
dc.subject.keywordPlus | DC | - |
dc.subject.keywordAuthor | quantum-well Hall devices | - |
dc.subject.keywordAuthor | Si-delta-doping | - |
dc.subject.keywordAuthor | low-pressure metal organic chemical vapour deposition (LP-MOCVD) | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Instruments & Instrumentation | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Instruments & Instrumentation | - |
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