DC Field | Value | Language |
---|---|---|
dc.contributor.author | Roh, TM | - |
dc.contributor.author | Suh, Y | - |
dc.contributor.author | Kim, B | - |
dc.contributor.author | Park, W | - |
dc.contributor.author | Lee, JB | - |
dc.contributor.author | Kim, YS | - |
dc.contributor.author | Lee, GY | - |
dc.date.accessioned | 2016-03-31T14:17:41Z | - |
dc.date.available | 2016-03-31T14:17:41Z | - |
dc.date.created | 2009-03-23 | - |
dc.date.issued | 1996-09-26 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.other | 1996-OAK-0000009544 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/21482 | - |
dc.description.abstract | An MMIC power amplifier using low-high doped GaAs MESFETs (LH-MESFETs) has been developed for a CDMA/AMPS dual mode cellular telephone. It is fully integrated on one chip (2.5 x 2.9 mm(2)) including all matching circuits. For CDMA operation at frequency of 836.5 MHz, an efficiency of 25% adjacent channel leakage power of -29 dBc at 885 kHz, and -48 dBc at 1980 kHz were obtained with an output power of 27.25 dBm and V-dd = 4.7 V. In AMPS operation, 30.5 dBm output power was obtained with 27.5 dB gain and 47% efficiency. The experimental results show that the gate periphery of LH-MESFETs and size of MMIC are much smaller than in previously reported similar amplifiers using conventional MESFET technology. This MMIC power amplifier is suitable for dual mode cellular applications. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEE-INST ELEC ENG | - |
dc.relation.isPartOf | ELECTRONICS LETTERS | - |
dc.subject | gallium arsenide | - |
dc.subject | MESFET | - |
dc.subject | MMIC | - |
dc.subject | power amplifiers | - |
dc.subject | code division multiple access | - |
dc.subject | cellular radio | - |
dc.title | GaAs low-high doped MESFET MMIC power amplifier for CDMA/AMPS dual-mode cellular telephone | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1049/el:19961280 | - |
dc.author.google | Roh, TM | - |
dc.author.google | Suh, Y | - |
dc.author.google | Kim, B | - |
dc.author.google | Park, W | - |
dc.author.google | Lee, JB | - |
dc.author.google | Kim, YS | - |
dc.author.google | Lee, GY | - |
dc.relation.volume | 32 | - |
dc.relation.issue | 20 | - |
dc.relation.startpage | 1928 | - |
dc.relation.lastpage | 1929 | - |
dc.contributor.id | 10106173 | - |
dc.relation.journal | ELECTRONICS LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ELECTRONICS LETTERS, v.32, no.20, pp.1928 - 1929 | - |
dc.identifier.wosid | A1996VL30600061 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 1929 | - |
dc.citation.number | 20 | - |
dc.citation.startPage | 1928 | - |
dc.citation.title | ELECTRONICS LETTERS | - |
dc.citation.volume | 32 | - |
dc.contributor.affiliatedAuthor | Kim, B | - |
dc.contributor.affiliatedAuthor | Park, W | - |
dc.identifier.scopusid | 2-s2.0-0030235617 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 2 | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | gallium arsenide | - |
dc.subject.keywordAuthor | MESFET | - |
dc.subject.keywordAuthor | MMIC | - |
dc.subject.keywordAuthor | power amplifiers | - |
dc.subject.keywordAuthor | code division multiple access | - |
dc.subject.keywordAuthor | cellular radio | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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