DC Field | Value | Language |
---|---|---|
dc.contributor.author | Youn, KJ | - |
dc.contributor.author | Kim, B | - |
dc.contributor.author | Lee, CS | - |
dc.contributor.author | Maeng, SJ | - |
dc.contributor.author | Lee, JJ | - |
dc.contributor.author | Pyun, KE | - |
dc.contributor.author | Park, HM | - |
dc.date.accessioned | 2016-03-31T14:18:23Z | - |
dc.date.available | 2016-03-31T14:18:23Z | - |
dc.date.created | 2009-03-18 | - |
dc.date.issued | 1996-08-15 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.other | 1996-OAK-0000009520 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/21500 | - |
dc.description.abstract | A new PCS power amplifier with gate bias control circuit has been developed for high efficiency at low output power level, and for high linearity al high output power level. The efficiency at an average operating power of 16dBm was improved to 10.5%, and the IMD(3) at the maximum operating power of 27dBm to -33dBc. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEE-INST ELEC ENG | - |
dc.relation.isPartOf | ELECTRONICS LETTERS | - |
dc.subject | linearisation techniques | - |
dc.subject | radiofrequency amplifiers | - |
dc.title | Low dissipation power and high linearity PCS power amplifier with adaptive gate bias control circuit | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1049/el:19961087 | - |
dc.author.google | Youn, KJ | - |
dc.author.google | Kim, B | - |
dc.author.google | Lee, CS | - |
dc.author.google | Maeng, SJ | - |
dc.author.google | Lee, JJ | - |
dc.author.google | Pyun, KE | - |
dc.author.google | Park, HM | - |
dc.relation.volume | 32 | - |
dc.relation.issue | 17 | - |
dc.relation.startpage | 1533 | - |
dc.relation.lastpage | 1535 | - |
dc.contributor.id | 10106173 | - |
dc.relation.journal | ELECTRONICS LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ELECTRONICS LETTERS, v.32, no.17, pp.1533 - 1535 | - |
dc.identifier.wosid | A1996VF33600007 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 1535 | - |
dc.citation.number | 17 | - |
dc.citation.startPage | 1533 | - |
dc.citation.title | ELECTRONICS LETTERS | - |
dc.citation.volume | 32 | - |
dc.contributor.affiliatedAuthor | Kim, B | - |
dc.identifier.scopusid | 2-s2.0-0030214997 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 1 | - |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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