DC Field | Value | Language |
---|---|---|
dc.contributor.author | An, KS | - |
dc.contributor.author | Park, RJ | - |
dc.contributor.author | Kim, JS | - |
dc.contributor.author | Park, CY | - |
dc.contributor.author | Kim, CY | - |
dc.contributor.author | Chung, JW | - |
dc.contributor.author | Kinoshita, T | - |
dc.contributor.author | Kakizaki, A | - |
dc.date.accessioned | 2016-03-31T14:19:15Z | - |
dc.date.available | 2016-03-31T14:19:15Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 1996-05 | - |
dc.identifier.issn | 0368-2048 | - |
dc.identifier.other | 1996-OAK-0000009490 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/21523 | - |
dc.description.abstract | The interface and silicide formation on Si(111)7x7 surface at 300 degrees C by Mg deposition was studied using low energy electron diffraction and synchrotron radiation photoelectron emission spectroscopy. At 300 degrees C only Mg/Si(111)1x1 structure was observed, which is different structure from the Mg/Si(111)1x1 surface formed at room temperature. A disordered Mg film was formed for further Mg deposition. We observed that the thin silicide layer between Mg film and Si substrate play a role as interdiffusion barrier for Mg atoms. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.relation.isPartOf | JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | - |
dc.subject | SYSTEM | - |
dc.title | PHOTOEMISSION STUDY FOR MG/SI(111)1X1 SURFACE | - |
dc.type | Article | - |
dc.contributor.college | 물리학과 | - |
dc.identifier.doi | 10.1016/0368-2048(96)02947-7 | - |
dc.author.google | AN, KS | - |
dc.author.google | PARK, RJ | - |
dc.author.google | KIM, JS | - |
dc.author.google | PARK, CY | - |
dc.author.google | KIM, CY | - |
dc.author.google | CHUNG, JW | - |
dc.author.google | KINOSHITA, T | - |
dc.author.google | KAKIZAKI, A | - |
dc.relation.volume | 80 | - |
dc.relation.startpage | 165 | - |
dc.relation.lastpage | 168 | - |
dc.contributor.id | 10052578 | - |
dc.relation.journal | JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Conference Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, v.80, pp.165 - 168 | - |
dc.identifier.wosid | A1996VA96200040 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 168 | - |
dc.citation.startPage | 165 | - |
dc.citation.title | JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | - |
dc.citation.volume | 80 | - |
dc.contributor.affiliatedAuthor | Chung, JW | - |
dc.identifier.scopusid | 2-s2.0-0039566431 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 8 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.relation.journalWebOfScienceCategory | Spectroscopy | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Spectroscopy | - |
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