DC Field | Value | Language |
---|---|---|
dc.contributor.author | Suh, KS | - |
dc.contributor.author | Lee, JL | - |
dc.contributor.author | Park, HH | - |
dc.contributor.author | Kim, CH | - |
dc.contributor.author | Lee, JJ | - |
dc.contributor.author | Nam, KS | - |
dc.date.accessioned | 2016-03-31T14:21:19Z | - |
dc.date.available | 2016-03-31T14:21:19Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 1996-02 | - |
dc.identifier.issn | 0921-5107 | - |
dc.identifier.other | 1996-OAK-0000009418 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/21580 | - |
dc.description.abstract | Surface properties of GaAs passivated with (NH4)(2)S-x solution have been analyzed in GaAs wafer and photo-resist-treated GaAs using X-ray photoelectron spectroscopy. Sulfur treatment on GaAs surface results in the formation of S-Ga and S-As bunds, which remain after successive rinsing for 1 min in DI water. After oxygen plasma treatment with the HCl-treated sample, the GaAs sur face is converted to an As-rich surface, namely, arsenic composition is higher than gallium composition. Meanwhile, the compositions or gallium and arsenic keep almost constant even after oxygen plasma treatment of the sulfidation-treated sample. This indicates that As-S and Ga-S bonds are revealed to resist the oxidation of the surface. Through in-situ annealing under UHV condition, it is found that the Ga-O bond is thermally stable, but the As-S bond unstable. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.relation.isPartOf | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | - |
dc.subject | X-ray photoelectron spectroscopy | - |
dc.subject | thermal stability | - |
dc.subject | passivation effects | - |
dc.subject | gallium arsenide | - |
dc.subject | HYDROGEN | - |
dc.title | Passivation effect of (NH4)(2)S-x treatment on GaAs surface before photo-resist and O-2 processes | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1016/0921-5107(95)01480-2 | - |
dc.author.google | KIM, CH | - |
dc.author.google | LEE, JJ | - |
dc.author.google | LEE, JL | - |
dc.author.google | NAM, KS | - |
dc.author.google | PARK, HH | - |
dc.author.google | SUH, KS | - |
dc.relation.volume | 37 | - |
dc.relation.issue | 1-3 | - |
dc.relation.startpage | 172 | - |
dc.relation.lastpage | 176 | - |
dc.contributor.id | 10105416 | - |
dc.relation.journal | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.37, no.1-3, pp.172 - 176 | - |
dc.identifier.wosid | A1996UM73500033 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 176 | - |
dc.citation.number | 1-3 | - |
dc.citation.startPage | 172 | - |
dc.citation.title | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | - |
dc.citation.volume | 37 | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 5 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | X-ray photoelectron spectroscopy | - |
dc.subject.keywordAuthor | thermal stability | - |
dc.subject.keywordAuthor | passivation effects | - |
dc.subject.keywordAuthor | gallium arsenide | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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