DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, JH | - |
dc.contributor.author | Lee, JW | - |
dc.contributor.author | Suh, YS | - |
dc.contributor.author | Kim, BM | - |
dc.date.accessioned | 2016-03-31T14:23:33Z | - |
dc.date.available | 2016-03-31T14:23:33Z | - |
dc.date.created | 2009-03-18 | - |
dc.date.issued | 1996-02 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.other | 1996-OAK-0000009333 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/21639 | - |
dc.description.abstract | To reduce the low-frequency noise, HBT's with a large emitter size of 120 x 120 mu m(2) are fabricated on abrupt emitter-base junction materials without undoped spacer. The HBT's exhibit an internal noise corner frequency of 100 Hz, which is much lower than about 100 kHz of conventional AlGaAs/GaAs HBT's, From the very low noise HBT's, the existence of resistance fluctuation 1/f noise is clearly verified by the simple comparison of collector current noise spectra with different base terminations. It is found that, at a high emitter-base forward bias, the resistance fluctuation 1/f noise becomes dominant for shorted base-emitter termination, but the internal 1/f noise dominant for open base. Device design rules for low noise small-feature size HBT, including resistance fluctuation, are discussed. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGI | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.subject | TRANSPORT | - |
dc.subject | HBTS | - |
dc.title | 1/f noise characteristics of AlGaAs/GaAs heterojunction bipolar transistor with a noise corner frequency below 1 kHz | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1109/55.484125 | - |
dc.author.google | Shin, JH | - |
dc.author.google | Lee, JW | - |
dc.author.google | Suh, YS | - |
dc.author.google | Kim, BM | - |
dc.relation.volume | 17 | - |
dc.relation.issue | 2 | - |
dc.relation.startpage | 65 | - |
dc.relation.lastpage | 68 | - |
dc.contributor.id | 10106173 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.17, no.2, pp.65 - 68 | - |
dc.identifier.wosid | A1996TU25200010 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 68 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 65 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 17 | - |
dc.contributor.affiliatedAuthor | Kim, BM | - |
dc.identifier.scopusid | 2-s2.0-0030082405 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 8 | - |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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