MOCVD-grown Al0.07Ga0.93As high-power laser diode array
SCIE
- Title
- MOCVD-grown Al0.07Ga0.93As high-power laser diode array
- Authors
- Son, NJ; Park, S; Ahn, JC; Kwon, OD
- Date Issued
- 1996-01
- Publisher
- IOP PUBLISHING LTD
- Abstract
- A laser diode array structure consisting of a 150 Angstrom Al0.07Ga0.93As single quantum well active region operating near 810 nm, cladded with an AlGaAs graded-index sep arate confinement heterostructure, has been grown by MOCVD. 3.1 W output power has been obtained from the 500 mu m aperture, uncoated laser diode array with 460 mu m cavity length. The internal quantum efficiency was found to be 75.8% and the internal loss 4.83 cm(-1).
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/21659
- ISSN
- 0951-3248
- Article Type
- Article
- Citation
- INSTITUTE OF PHYSICS CONFERENCE SERIES, vol. 145, page. 999 - 1002, 1996-01
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- There are no files associated with this item.
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