Quantum Hall effect devices of delta-doped Al(0.25)Ga(0.75)AS/In(0.25)Ga(0.75)AS/GaAs pseudomorphic heterostructures grown by LP-MOCVD

Abstract

Quantum Hall effect devices based on delta-doped Al0.25Ga0.75In0.25Ga0.75As/GaAs pseudomorphic heterostructure materials grown by low-pressure metal organic chemical vapor deposition(LP-MOCVD) are sucessfully fabricated. A high electron mobility of 7200 cm(2)/V . s with a sheet carrier density of 2.0 x 10(12)cm(-2) has been achieved at room temperature. The temperature coefficient of product sensitivity is -0.1%/K. The minimum detectable magnetic field (B-min) of 3 mu T at 1 Hz is achieved due to the high electron mobility.