DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, JH | - |
dc.contributor.author | Lee, JW | - |
dc.contributor.author | Suh, YS | - |
dc.contributor.author | Kim, BM | - |
dc.date.accessioned | 2016-03-31T14:24:25Z | - |
dc.date.available | 2016-03-31T14:24:25Z | - |
dc.date.created | 2009-03-18 | - |
dc.date.issued | 1996-01 | - |
dc.identifier.issn | 0951-3248 | - |
dc.identifier.other | 1996-OAK-0000009302 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/21663 | - |
dc.description.abstract | The internal low-frequency noise sources of AlGaAs/GaAs HBT's are related to the detailed epi-layer structure as well as surface recombination velocity fluctuation at the extrinsic GaAs base surface. HBT's with a large emitter size of 120 x 120 mu m(2) are fabricated on abrupt emitter-base junction materials without undoped spacer, and the HBT's exhibit an internal noise corner frequency of 100 Hz, which is much lower than about 100 kHz of conventional AlGaAs/GaAs HBT's. The existence of resistance fluctuation 1/f noise is clearly verified by the simple comparison of collector current noise spectra with the varying base termination. It is found that, at a high emitter-base bias, the resistance fluctuation 1/f noise becomes dominant for shorted base-emitter termination, but the internal 1/f noise dominant for open base. To improve the low-frequency noise characteristics for a practical small feature size HBT, device design rules including resistance fluctuation are discussed. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.relation.isPartOf | INSTITUTE OF PHYSICS CONFERENCE SERIES | - |
dc.title | 1/f noise characteristics of AlGaAs/GaAs heterojunction bipolar transistor with a noise corner frequency below 1 kHz | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.author.google | Shin, JH | - |
dc.author.google | Lee, JW | - |
dc.author.google | Suh, YS | - |
dc.author.google | Kim, BM | - |
dc.relation.volume | 145 | - |
dc.relation.startpage | 655 | - |
dc.relation.lastpage | 660 | - |
dc.contributor.id | 10106173 | - |
dc.relation.journal | INSTITUTE OF PHYSICS CONFERENCE SERIES | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Conference Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | INSTITUTE OF PHYSICS CONFERENCE SERIES, v.145, pp.655 - 660 | - |
dc.identifier.wosid | A1996BF51P00118 | - |
dc.date.tcdate | 2018-03-23 | - |
dc.citation.endPage | 660 | - |
dc.citation.startPage | 655 | - |
dc.citation.title | INSTITUTE OF PHYSICS CONFERENCE SERIES | - |
dc.citation.volume | 145 | - |
dc.contributor.affiliatedAuthor | Kim, BM | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.relation.journalResearchArea | Physics | - |
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