Article
Cited 9 time in 
Cited 10 time in 
Cited 10 time in
Metadata Downloads
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | BHAT, R | - |
| dc.contributor.author | CANEAU, C | - |
| dc.contributor.author | HAYES, JR | - |
| dc.contributor.author | HONG, WP | - |
| dc.contributor.author | JEONG, DH | - |
| dc.contributor.author | JEONG, YH | - |
| dc.date.accessioned | 2016-04-01T00:57:30Z | - |
| dc.date.available | 2016-04-01T00:57:30Z | - |
| dc.date.created | 2009-02-28 | - |
| dc.date.issued | 1992-02-01 | - |
| dc.identifier.issn | 0021-4922 | - |
| dc.identifier.other | 1992-OAK-0000008559 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/22209 | - |
| dc.description.abstract | We report on organometallic chemical vapor deposition (OMCVD)-grown AlInAs/InP field effect transistors (EET's), employing a delta-doped channel. The EET's, having a gate length of 1.0-mu-m, demonstrated excellent saturation characteristics and a broad plateau of transconductance around a peak value of 210 mS/mm. The transistors were also highly stable with no hysteresis or long-term drain current drift being observed. | - |
| dc.description.statementofresponsibility | X | - |
| dc.language | English | - |
| dc.publisher | JAPAN J APPLIED PHYSICS | - |
| dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | - |
| dc.title | ALINAS/INP DELTA-DOPED CHANNEL FIELD-EFFECT TRANSISTOR GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION | - |
| dc.type | Article | - |
| dc.contributor.college | 전자전기공학과 | - |
| dc.identifier.doi | 10.1143/JJAP.31.L66 | - |
| dc.author.google | BHAT, R | - |
| dc.author.google | CANEAU, C | - |
| dc.author.google | HAYES, JR | - |
| dc.author.google | HONG, WP | - |
| dc.author.google | JEONG, DH | - |
| dc.author.google | JEONG, YH | - |
| dc.relation.volume | 31 | - |
| dc.relation.startpage | L66 | - |
| dc.relation.lastpage | L67 | - |
| dc.contributor.id | 10106021 | - |
| dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | - |
| dc.relation.index | SCI급, SCOPUS 등재논문 | - |
| dc.relation.sci | SCI | - |
| dc.collections.name | Journal Papers | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.31, no.2A, pp.L66 - L67 | - |
| dc.identifier.wosid | A1992HK03100002 | - |
| dc.citation.endPage | L67 | - |
| dc.citation.number | 2A | - |
| dc.citation.startPage | L66 | - |
| dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | - |
| dc.citation.volume | 31 | - |
| dc.contributor.affiliatedAuthor | JEONG, YH | - |
| dc.identifier.scopusid | 2-s2.0-0026819170 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 8 | - |
| dc.type.docType | Article | - |
| dc.subject.keywordAuthor | ALINAS/INP | - |
| dc.subject.keywordAuthor | DELTA-DOPED | - |
| dc.subject.keywordAuthor | FET | - |
| dc.subject.keywordAuthor | OMCVD | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
Communities & Collection
Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg