DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, GB | - |
dc.contributor.author | Hong, SH | - |
dc.contributor.author | Jung, SW | - |
dc.contributor.author | Jeong, YH | - |
dc.date.accessioned | 2016-04-01T01:07:32Z | - |
dc.date.available | 2016-04-01T01:07:32Z | - |
dc.date.created | 2009-08-05 | - |
dc.date.issued | 2008-10 | - |
dc.identifier.issn | 1531-1309 | - |
dc.identifier.other | 2008-OAK-0000008248 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/22441 | - |
dc.description.abstract | A new extraction method of series resistance based on the radio frequency S-parameter measurement for sub -0.1 mu m, metal oxide semiconductor field-effect transistor is presented. The practical limit of conventional methods is analyzed from measurement and simulation. From this analysis, analytical expressions are derived, and linear regression techniques are used to extract the series resistances. The proposed method improves the accuracy and reduces the measurement frequency. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGI | - |
dc.relation.isPartOf | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.subject | Extraction | - |
dc.subject | modeling | - |
dc.subject | metal oxide semiconductor field-effect transistor (MOSFET) | - |
dc.subject | radio frequency (RF) | - |
dc.subject | series resistance | - |
dc.subject | small signal | - |
dc.subject | IC DESIGN | - |
dc.subject | PARAMETERS | - |
dc.title | On the RF Series Resistance Extraction of Nanoscale MOSFETs | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1109/LMWC.2008.2003472 | - |
dc.author.google | Choi, GB | - |
dc.author.google | Hong, SH | - |
dc.author.google | Jung, SW | - |
dc.author.google | Jeong, YH | - |
dc.relation.volume | 18 | - |
dc.relation.issue | 10 | - |
dc.relation.startpage | 689 | - |
dc.relation.lastpage | 691 | - |
dc.contributor.id | 10106021 | - |
dc.relation.journal | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.18, no.10, pp.689 - 691 | - |
dc.identifier.wosid | 000260219700013 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 691 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 689 | - |
dc.citation.title | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.citation.volume | 18 | - |
dc.contributor.affiliatedAuthor | Jeong, YH | - |
dc.identifier.scopusid | 2-s2.0-54049130514 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 9 | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Extraction | - |
dc.subject.keywordAuthor | modeling | - |
dc.subject.keywordAuthor | metal oxide semiconductor field-effect transistor (MOSFET) | - |
dc.subject.keywordAuthor | radio frequency (RF) | - |
dc.subject.keywordAuthor | series resistance | - |
dc.subject.keywordAuthor | small signal | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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