Versatile use of vertical-phase-separation-induced bilayer structures in organic thin-film transistors
SCIE
SCOPUS
- Title
- Versatile use of vertical-phase-separation-induced bilayer structures in organic thin-film transistors
- Authors
- Qiu, L; Lim, JA; Wang, X; Lee, WH; Hwang, M; Cho, K
- Date Issued
- 2008-03-18
- Publisher
- WILEY-V C H VERLAG GMBH
- Abstract
- A semiconductor-top and dielectric-bottom bilayer structure is fabricated by surface-induced vertical phase separation of poly (3-hexylthiophene) (P3HT) and poly(methyl methacrylate) (PMMA) blends (see figure). This structure allows to prepare high-performance, low-semiconductor-content, and low-voltage-driven TFTs in a very effective method, in which the dielectric and semiconductor layers are deposited onto a substrate in a one-step process.
- Keywords
- INTEGRATED-CIRCUITS; POLYMER BLENDS; POLY(3-HEXYLTHIOPHENE); POLYTHIOPHENE; INTERFACE; TRANSPORT; MOBILITY; DEVICES
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/22821
- DOI
- 10.1002/adma.200702505
- ISSN
- 0935-9648
- Article Type
- Article
- Citation
- ADVANCED MATERIALS, vol. 20, no. 6, page. 1141 - 1145, 2008-03-18
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- There are no files associated with this item.
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