Synthesis of ferromagnetic and transparent cobalt-doped indium-tin oxides by magnetron sputtering

Abstract

Low-resistance and high-transparency cobalt-doped indium-tin oxides (ITO) showing ferromagnetic behavior were obtained by magnetron cosputtering technique. The majority of Co atoms occupied In (or Sn) sites of ITO at 8% doping, leading to hole generation and a concomitant ferromagnetic response with a maximum magnetization of approximately 0.26 mu(B)/Co. As the Co concentration increased to 14%, oxide precipitates were formed. The resistivity at 8% doping was as low as 4.28 x 10(-3) Omega.cm. The optical transmissions at 460 nm and 520 nm reached maximums of 72.7% and 86.6%, respectively.