RF capacitance extraction utilizing a series resistance deembedding scheme for ultraleaky MOS devices
SCIE
SCOPUS
- Title
- RF capacitance extraction utilizing a series resistance deembedding scheme for ultraleaky MOS devices
- Authors
- Choi, GB; Hong, SH; Jung, SW; Kang, HS; Jeong, YH
- Date Issued
- 2008-03
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGI
- Abstract
- An accurate extraction method for series resistance and capacitance based on RF S-parameter measurement in ultraleaky MOS devices is presented in this paper. The method is proven by using a three-element equivalent circuit model for a capacitor and a well-known microwave theory. The proposed method improves the measurement accuracy and significantly reduces the frequency-dependence of capacitance. This method is demonstrated for a 1.5 mn SiO2 dielectric NMOSFET.
- Keywords
- capacitance extraction; capacitance-voltage (C - V); deembedding; gate leakage; MOS; RF; series resistance; ultrathin oxide; DIELECTRICS; OXIDE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/22904
- DOI
- 10.1109/LED.2007.914
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 29, no. 3, page. 238 - 241, 2008-03
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- There are no files associated with this item.
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