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Cited 2 time in webofscience Cited 2 time in scopus
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dc.contributor.authorKim, ND-
dc.contributor.authorKang, TS-
dc.contributor.authorJe, JH-
dc.contributor.authorKim, HJ-
dc.contributor.authorNoh, DY-
dc.contributor.authorChung, JW-
dc.date.accessioned2016-04-01T01:26:14Z-
dc.date.available2016-04-01T01:26:14Z-
dc.date.created2009-02-28-
dc.date.issued2008-04-
dc.identifier.issn0947-8396-
dc.identifier.other2008-OAK-0000007516-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/22926-
dc.description.abstractWe have investigated the atomic arrangement of a barium (Ba)-induced Si(111)-3x2 surface by using surface-sensitive synchrotron X-ray scattering. In-plane fractional-order reflections obtained from three rotational domains of 3x1 symmetry have been used to examine several competing structural models including the honeycomb-chain-channel (HCC) and the double-pi-bonded chain (D pi C) models. By fitting two different data sets, both the goodness-of-the fits chi(2) and the residuum R-factor strongly favor the HCC over the D pi C model. We conclude that a Ba-paired HCC structure with a 1/3 monolayer of Ba coverage best describes the Ba-induced 3 x 2 surface with a Ba-Ba interatomic spacing d=1.93 angstrom.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherSPRINGER-
dc.relation.isPartOfAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING-
dc.subjectELECTRONIC-STRUCTURE-
dc.subjectRECONSTRUCTION-
dc.subjectDIFFRACTION-
dc.subjectMODEL-
dc.subjectMG-
dc.subjectMETALS-
dc.titleX-ray scattering for the atomic structure of a barium-induced Si(111)-3 x 2 surface-
dc.typeArticle-
dc.contributor.college물리학과-
dc.identifier.doi10.1007/s00339-007-4368-z-
dc.author.googleKim, ND-
dc.author.googleKang, TS-
dc.author.googleJe, JH-
dc.author.googleKim, HJ-
dc.author.googleNoh, DY-
dc.author.googleChung, JW-
dc.relation.volume91-
dc.relation.issue1-
dc.relation.startpage53-
dc.relation.lastpage57-
dc.contributor.id10052578-
dc.relation.journalAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.91, no.1, pp.53 - 57-
dc.identifier.wosid000253127900010-
dc.date.tcdate2019-01-01-
dc.citation.endPage57-
dc.citation.number1-
dc.citation.startPage53-
dc.citation.titleAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING-
dc.citation.volume91-
dc.contributor.affiliatedAuthorJe, JH-
dc.contributor.affiliatedAuthorChung, JW-
dc.identifier.scopusid2-s2.0-39149137185-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc2-
dc.type.docTypeArticle-
dc.subject.keywordPlusELECTRONIC-STRUCTURE-
dc.subject.keywordPlusRECONSTRUCTION-
dc.subject.keywordPlusDIFFRACTION-
dc.subject.keywordPlusMODEL-
dc.subject.keywordPlusMG-
dc.subject.keywordPlusMETALS-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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