Dependence of electrical properties on interfacial layer of Ta2O5 films
SCIE
SCOPUS
- Title
- Dependence of electrical properties on interfacial layer of Ta2O5 films
- Authors
- Lee, JW; Ham, MH; Maeng, WJ; Kim, H; Myoung, JM
- Date Issued
- 2007-12
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- The change in the thickness and chemical states of the interfacial layer and the related electrical properties in Ta2O5 films with different annealing temperatures were investigated. The high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the 700 degrees C-annealed Ta2O5 film remained to be amorphous and had the thinnest interfacial layer which was caused by Ta-silicate decomposition to Ta2O5 and SiO2. In addition, the electrical properties were improved after annealing treatments. Our results suggest that an annealing treatment at 700 degrees C results in the highest capacitance and the lowest leakage current in Ta2O5 films due to the thinnest interfacial layer and non-crystallization. (C) 2007 Elsevier B.V. All rights reserved.
- Keywords
- tantalum oxide; interfacial layer; high-resolution transmission electron microscopy; X-ray photoelectron spectroscopy; MOLECULAR-BEAM EPITAXY; THIN-FILMS; HFO2; DIELECTRICS; TECHNOLOGY; SURFACE; SI
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/23014
- DOI
- 10.1016/j.mee.2007.02.008
- ISSN
- 0167-9317
- Article Type
- Article
- Citation
- MICROELECTRONIC ENGINEERING, vol. 84, no. 12, page. 2865 - 2868, 2007-12
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