Self-limiting growth of titanium silicate and effects of thermal annealing on the electrical properties of titanium silicate/SiO2

Abstract

Titanium silicate thin. films were deposited using self-limiting atomic layer growth technique. Grown. films showed smooth. film surface morphology. As deposited, 8 nm- thick. film surface showed an RMS value of 0.43 nm and annealed. film showed a smoother surface having RMS of 0.2 nm. Electrical properties of titanium silicate/SiO2 bilayer were investigated using capacitance-voltage (C-V) and leakage current-voltage (I-V) measurements. The grown. films showed high dielectric properties with low impurity contents and low leakage currents. Upon annealing at 800 degrees C, capacitance slightly decreased, which is likely due to the interfacial reactions. Generally thermal annealing decreased hysteresis in C-V results.