High quality epitaxial CoSi2 using plasma nitridation-mediated epitaxy: The effects of the capping layer
SCIE
SCOPUS
- Title
- High quality epitaxial CoSi2 using plasma nitridation-mediated epitaxy: The effects of the capping layer
- Authors
- Lee, HBR; Gu, GH; Son, JY; Park, CG; Kim, H
- Date Issued
- 2007-11-01
- Publisher
- AMER INST PHYSICS
- Abstract
- The epitaxial growth of CoSi2 from Co with a Ti capping layer using plasma nitridation-mediated epitaxy (PNME) was demonstrated. By exposing the Si substrate to the NH3 plasma, an a-SiNx layer was formed with atomic scale thickness controllability. After Co and Ti deposition followed by annealing, high quality epitaxial CoSi2 was formed on Si(001) with a perfectly flat interface. However, the epitaxial growth was observed for Co with a Ti capping layer prepared only by ex situ deposition, not by in situ deposition. The epitaxial CoSi2 was analyzed by x-ray diffraction and a scanning transmission electron microscope. Based on these results, the mechanism of PNME and the effects of the Ti capping layer process on silicidation were discussed.(C) 2007 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/23077
- DOI
- 10.1063/1.2805649
- ISSN
- 0021-8979
- Article Type
- Article
- Citation
- JOURNAL OF APPLIED PHYSICS, vol. 102, no. 9, 2007-11-01
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