White X-ray beam topography and radiography of Si1-xGex crystals bonded to silicon
SCIE
SCOPUS
- Title
- White X-ray beam topography and radiography of Si1-xGex crystals bonded to silicon
- Authors
- Argunova, TS; Yi, JM; Jung, JW; Je, JH; Sorokin, LM; Gutkin, MY; Belyakova, EI; Kostina, LS; Zabrodskii, AG; Abrosimov, NV
- Date Issued
- 2007-08
- Publisher
- WILEY-V C H VERLAG GMBH
- Abstract
- The defect structure of Si1-xGex. wafers with 4% of germanium and their interfaces with Si wafers were studied using white radiation topography and phase-sensitive radiography. The heterostructures were manufactured by direct bonding of Si1-xGex. and Si crystalline wafers made of bulk crystals that were grown by the Czochralski technique. In Si1-xGex. crystals, the segregations of Ge act as dislocation nucleation sites. In Si1-xGex/Si bonded structures, the segregation of Ge as well as the accumulation of dislocations induce elastic strain and plastic deformation during high-temperature bonding annealing. With the topography-radiography combination, we are able not only to detect microcracks, indicating nonbonded areas, by radiography, but also to reveal dislocations and long-range strain fields by topography at the same time. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/23200
- DOI
- 10.1002/pssa.200675667
- ISSN
- 0031-8965
- Article Type
- Article
- Citation
- PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, vol. 204, no. 8, page. 2669 - 2674, 2007-08
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- There are no files associated with this item.
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