35-nm zigzag T-gate In0.52Al0.48As/In0.53Ga0.47As metamorphic GaAsHEMTs with an ultrahigh f(max) of 520 GHz
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- Title
- 35-nm zigzag T-gate In0.52Al0.48As/In0.53Ga0.47As metamorphic GaAsHEMTs with an ultrahigh f(max) of 520 GHz
- Authors
- Lee, KS; Kim, YS; Hong, YK; Jeong, YH
- Date Issued
- 2007-08
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGI
- Abstract
- Metamorphic GaAs high electron mobility transistors (mHEMTs) with the highest-f(max) reported to date are presented here. The 35-nm zigzag T-gate In0.52Al0.48As/ In0.53Ga0.47As metamorphic GaAs HEMTs show f(max) of 520 GHz, f(T) of 440 GHz, and maximum transconductance (g(m)) of 1100 mS/mrn at a drain current of 333 mA/mm. The combinations of f(max) and f(T) are the highest data yet reported for mHEMTs. These devices are promising candidates for aggressively scaled sub-35-nm T-gate mHEMTs.
- Keywords
- high-electron mobility transistor (HEMT); metamorphic; metamorphic high electron mobility transistor (mHEMT); nanometer scale T-gate; zigzag T-gate; INALAS/INGAAS HEMTS; FABRICATION; FREQUENCY; F(T)
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/23259
- DOI
- 10.1109/LED.2007.901
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 28, no. 8, page. 672 - 675, 2007-08
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