DC Field | Value | Language |
---|---|---|
dc.contributor.author | Sorokin, LM | - |
dc.contributor.author | Argunova, TS | - |
dc.contributor.author | Abrosimov, NV | - |
dc.contributor.author | Gutkin, MY | - |
dc.contributor.author | Zabrodskii, AG | - |
dc.contributor.author | Kostina, LS | - |
dc.contributor.author | Jung, JW | - |
dc.contributor.author | Je, JH | - |
dc.date.accessioned | 2016-04-01T01:36:06Z | - |
dc.date.available | 2016-04-01T01:36:06Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2007-06 | - |
dc.identifier.issn | 1063-7850 | - |
dc.identifier.other | 2007-OAK-0000006996 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/23296 | - |
dc.description.abstract | The relationship between the plastic strain and the inhomogeneity of germanium distribution in single crystals of GexSi1 (-x) (x = 4-9 at %) solid solutions grown using the Czochralski method has been studied. It is established that plastic straining develops via the nucleation of dislocations at their sources occurring in the Ge segregation bands, while the inhomogeneous profile of Ge distribution across the growth direction is caused by thermoelastic stresses. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | MAIK NAUKA/INTERPERIODICA/SPRINGER | - |
dc.relation.isPartOf | TECHNICAL PHYSICS LETTERS | - |
dc.subject | SI1-XGEX SINGLE-CRYSTALS | - |
dc.subject | HETEROSTRUCTURES | - |
dc.subject | TRANSISTORS | - |
dc.title | Composition ffnhomogeneity and structural defects in czochralsi grown GexSi1-x solid solution crystals | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1134/S106378500706020X | - |
dc.author.google | Sorokin, LM | - |
dc.author.google | Argunova, TS | - |
dc.author.google | Abrosimov, NV | - |
dc.author.google | Gutkin, MY | - |
dc.author.google | Zabrodskii, AG | - |
dc.author.google | Kostina, LS | - |
dc.author.google | Jung, JW | - |
dc.author.google | Je, JH | - |
dc.relation.volume | 33 | - |
dc.relation.issue | 6 | - |
dc.relation.startpage | 512 | - |
dc.relation.lastpage | 516 | - |
dc.contributor.id | 10123980 | - |
dc.relation.journal | TECHNICAL PHYSICS LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | TECHNICAL PHYSICS LETTERS, v.33, no.6, pp.512 - 516 | - |
dc.identifier.wosid | 000247981600020 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 516 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 512 | - |
dc.citation.title | TECHNICAL PHYSICS LETTERS | - |
dc.citation.volume | 33 | - |
dc.contributor.affiliatedAuthor | Je, JH | - |
dc.identifier.scopusid | 2-s2.0-34547274933 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 4 | - |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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