DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, J | - |
dc.contributor.author | Yong, KJ | - |
dc.date.accessioned | 2016-04-01T01:39:18Z | - |
dc.date.available | 2016-04-01T01:39:18Z | - |
dc.date.created | 2009-04-02 | - |
dc.date.issued | 2007-05-01 | - |
dc.identifier.issn | 0022-3093 | - |
dc.identifier.other | 2007-OAK-0000006828 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/23412 | - |
dc.description.abstract | Hafnium silicate (HfSixOy) films were deposited by metal-organic chemical vapor deposition (MOCVD) using a combination of precursors: hafnium tetra-tert-butoxide [Hf(OC(CH3)(3))(4), HTB] and tetrakis-ethylmethylamino silane [Si(N(C2H5)(CH3))(4), TEMAS]. The activation energy was independent on the ratio of precursor amounts in the surface reaction regime. The grown films showed Hf-rich characteristics and the impurity concentrations were less than 1 at.% (below detection limits). Hafnium silicate films were amorphous up to 700 degrees C annealing. Hf/(Hf+Si) composition ratio and dielectric constant (k) of the Hf-silicate films decreased by increasing the growth temperature above 270 degrees C. (C) 2007 Elsevier B.V. All rights reserved. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.relation.isPartOf | JOURNAL OF NON-CRYSTALLINE SOLIDS | - |
dc.subject | thin film transistors | - |
dc.subject | chemical vapor deposition | - |
dc.subject | silicates | - |
dc.subject | X-ray diffraction | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | ATOMIC LAYER DEPOSITION | - |
dc.subject | GATE-DIELECTRIC APPLICATIONS | - |
dc.subject | THERMAL-STABILITY | - |
dc.subject | ZIRCONIUM-OXIDE | - |
dc.subject | HAFNIUM OXIDE | - |
dc.subject | PRECURSORS | - |
dc.subject | SI(100) | - |
dc.subject | STACKS | - |
dc.subject | OZONE | - |
dc.title | MOCVD and characterization of Hf-silicate thin films using HTB and TEMAS | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | - |
dc.identifier.doi | 10.1016/j.jnoncrysol.2006.12.030 | - |
dc.author.google | Kim, J | - |
dc.author.google | Yong, KJ | - |
dc.relation.volume | 353 | - |
dc.relation.issue | 11-12 | - |
dc.relation.startpage | 1172 | - |
dc.relation.lastpage | 1176 | - |
dc.contributor.id | 10131864 | - |
dc.relation.journal | JOURNAL OF NON-CRYSTALLINE SOLIDS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF NON-CRYSTALLINE SOLIDS, v.353, no.11-12, pp.1172 - 1176 | - |
dc.identifier.wosid | 000246257400024 | - |
dc.date.tcdate | 2018-12-01 | - |
dc.citation.endPage | 1176 | - |
dc.citation.number | 11-12 | - |
dc.citation.startPage | 1172 | - |
dc.citation.title | JOURNAL OF NON-CRYSTALLINE SOLIDS | - |
dc.citation.volume | 353 | - |
dc.contributor.affiliatedAuthor | Yong, KJ | - |
dc.identifier.scopusid | 2-s2.0-33947368671 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 8 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | THERMAL-STABILITY | - |
dc.subject.keywordPlus | ZIRCONIUM-OXIDE | - |
dc.subject.keywordPlus | HAFNIUM OXIDE | - |
dc.subject.keywordAuthor | thin film transistors | - |
dc.subject.keywordAuthor | chemical vapor deposition | - |
dc.subject.keywordAuthor | silicates | - |
dc.subject.keywordAuthor | X-ray diffraction | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Ceramics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
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