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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, J | - |
| dc.contributor.author | Yong, KJ | - |
| dc.date.accessioned | 2016-04-01T01:41:33Z | - |
| dc.date.available | 2016-04-01T01:41:33Z | - |
| dc.date.created | 2009-04-02 | - |
| dc.date.issued | 2006-10 | - |
| dc.identifier.issn | 0218-625X | - |
| dc.identifier.other | 2007-OAK-0000006702 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/23493 | - |
| dc.description.abstract | Zirconium silicate (ZrxSi1-xO2) thin films were deposited by pulsed metal-organic chemical vapor deposition (MOCVD) using zirconium tert-butoxide (ZTB) and tetrakis-diethylamido silane (TDEAS). The growth temperature of 200-300 degrees C was used to deposit films with uniform thickness. The grown films showed the Zr-rich composition, which is thought to induce the Zr-silicide formation at the interface of the silicate and Si substrate. The film composition and chemical binding states were investigated by XPS depth profiling measurements. | - |
| dc.description.statementofresponsibility | X | - |
| dc.language | English | - |
| dc.publisher | WORLD SCIENTIFIC PUBL CO PTE LTD | - |
| dc.relation.isPartOf | SURFACE REVIEW AND LETTERS | - |
| dc.subject | zirconium silicate | - |
| dc.subject | MOCVD | - |
| dc.subject | metal oxide | - |
| dc.subject | ATOMIC LAYER DEPOSITION | - |
| dc.subject | GATE DIELECTRICS | - |
| dc.subject | HAFNIUM | - |
| dc.title | Growth of zirconium silicate thin film by pulsed-MOCVD using ZTB and TDEAS | - |
| dc.type | Article | - |
| dc.contributor.college | 화학공학과 | - |
| dc.identifier.doi | 10.1142/S0218625X06008505 | - |
| dc.author.google | Kim, J | - |
| dc.author.google | Yong, KJ | - |
| dc.relation.volume | 13 | - |
| dc.relation.issue | 5 | - |
| dc.relation.startpage | 567 | - |
| dc.relation.lastpage | 571 | - |
| dc.contributor.id | 10131864 | - |
| dc.relation.journal | SURFACE REVIEW AND LETTERS | - |
| dc.relation.index | SCI급, SCOPUS 등재논문 | - |
| dc.relation.sci | SCI | - |
| dc.collections.name | Journal Papers | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | SURFACE REVIEW AND LETTERS, v.13, no.5, pp.567 - 571 | - |
| dc.identifier.wosid | 000245367500005 | - |
| dc.date.tcdate | 2018-03-23 | - |
| dc.citation.endPage | 571 | - |
| dc.citation.number | 5 | - |
| dc.citation.startPage | 567 | - |
| dc.citation.title | SURFACE REVIEW AND LETTERS | - |
| dc.citation.volume | 13 | - |
| dc.contributor.affiliatedAuthor | Yong, KJ | - |
| dc.identifier.scopusid | 2-s2.0-33847111622 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.type.docType | Article | - |
| dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
| dc.subject.keywordPlus | GATE DIELECTRICS | - |
| dc.subject.keywordPlus | HAFNIUM | - |
| dc.subject.keywordAuthor | zirconium silicate | - |
| dc.subject.keywordAuthor | MOCVD | - |
| dc.subject.keywordAuthor | metal oxide | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Chemistry | - |
| dc.relation.journalResearchArea | Physics | - |
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Related Researcher
- 용기중YONG, KIJUNG
- Dept. of Chemical Enginrg