Low-temperature (similar to 270 degrees C) growth of vertically aligned ZnO nanorods using photoinduced metal organic vapour phase epitaxy
SCIE
SCOPUS
- Title
- Low-temperature (similar to 270 degrees C) growth of vertically aligned ZnO nanorods using photoinduced metal organic vapour phase epitaxy
- Authors
- Yatsui, T; Lim, J; Nakamata, T; Kitamura, K; Ohtsu, M; Yi, GC
- Date Issued
- 2007-02-14
- Publisher
- IOP PUBLISHING LTD
- Abstract
- We successfully produced a drastic decrease in the required growth temperature of single-crystalline ZnO nanorods, and enabled successful growth of vertically aligned ZnO nanorods on a Si(100) substrate using photoinduced metal organic vapour phase epitaxy (MOVPE). We introduced 325 nm light during the MOVPE growth, and achieved vertical growth of single-crystalline ZnO nanorods with a hexagonal crystal structure on Si(100) at a growth temperature of 270 degrees C. The successful low-temperature growth of ZnO nanorods on the Si(100) substrate described here is a promising step toward designing nanoscale photonic and electronic devices required by future systems.
- Keywords
- OPTICAL NEAR-FIELD; PHOTOLUMINESCENT PROPERTIES; STIMULATED-EMISSION; FABRICATION; DIETHYLZINC; DESORPTION; OPERATION; POSITION; SIZE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/23580
- DOI
- 10.1088/0957-4484/18
- ISSN
- 0957-4484
- Article Type
- Article
- Citation
- NANOTECHNOLOGY, vol. 18, no. 6, 2007-02-14
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- There are no files associated with this item.
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