DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, J | - |
dc.contributor.author | Yong, K | - |
dc.date.accessioned | 2016-04-01T01:45:07Z | - |
dc.date.available | 2016-04-01T01:45:07Z | - |
dc.date.created | 2009-04-02 | - |
dc.date.issued | 2007-04 | - |
dc.identifier.issn | 0957-4522 | - |
dc.identifier.other | 2007-OAK-0000006511 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/23623 | - |
dc.description.abstract | Hafnium silicate (HfSixOy) films were deposited by metal-organic chemical vapor deposition (MOCVD) using hafnium tetra-tert-butoxide [HTB, Hf(OC(CH3)(3))(4)] and tetrakis-diethylamino silane [TDEAS, Si(N(C2H5)(2))(4)]. The grown Hf-silicate films showed Hf-rich composition and impurity concentrations less than 1 atomic % ( below detection limits). Uniformly deposited films with good step-coverage were obtained on hole-patterned SiO2 substrates. Hafnium silicate films had stable amorphous crystalline structure up to 800 degrees C annealing and above 900 degrees C, a tetragonal HfO2 crystal phase was observed. Dielectric constant (k) of the Hf-silicate films was about 15 and flat band voltage (V-fb) and hysteresis were very low. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | SPRINGER | - |
dc.relation.isPartOf | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | ATOMIC LAYER DEPOSITION | - |
dc.subject | GATE-DIELECTRIC APPLICATIONS | - |
dc.subject | THERMAL-STABILITY | - |
dc.subject | HFO2 | - |
dc.subject | PRECURSORS | - |
dc.subject | OXIDE | - |
dc.subject | STACKS | - |
dc.subject | OZONE | - |
dc.subject | ALD | - |
dc.title | Conformal growth and characterization of hafnium silicate thin film by MOCVD using HTB (hafnium tertra-tert-butoxide) and TDEAS (tetrakis-diethylamino silane) | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | - |
dc.identifier.doi | 10.1007/s10854-006-9050-2 | - |
dc.author.google | Kim, J | - |
dc.author.google | Yong, K | - |
dc.relation.volume | 18 | - |
dc.relation.issue | 4 | - |
dc.relation.startpage | 391 | - |
dc.relation.lastpage | 395 | - |
dc.contributor.id | 10131864 | - |
dc.relation.journal | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.18, no.4, pp.391 - 395 | - |
dc.identifier.wosid | 000243397500004 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 395 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 391 | - |
dc.citation.title | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | - |
dc.citation.volume | 18 | - |
dc.contributor.affiliatedAuthor | Yong, K | - |
dc.identifier.scopusid | 2-s2.0-33846090135 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 1 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | GATE-DIELECTRIC APPLICATIONS | - |
dc.subject.keywordPlus | THERMAL-STABILITY | - |
dc.subject.keywordPlus | HFO2 | - |
dc.subject.keywordPlus | PRECURSORS | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | STACKS | - |
dc.subject.keywordPlus | OZONE | - |
dc.subject.keywordPlus | ALD | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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